Prebaking and silicon epitaxial growth enhanced by UV radiation

A. Ishitani; Y. Ohshita; K. Tanigaki; K. Takada; S. Itoh

doi:10.1063/1.337983

Prebaking and silicon epitaxial growth enhanced by UV radiation

A. Ishitani, Y. Ohshita, K. Tanigaki, K. Takada, S. Itoh

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

UV light irradiation effects on prebaking and silicon epitaxial growth is studied. An ArF excimer laser, a KrF excimer laser, and a Hg-Xe lamp are used as light sources. The epitaxial growth is carried out using a SiH ₂Cl₂/H₂ system under reduced pressure. ArF radiation and Hg-Xe radiation are found to be effective for volatilizing native SiO₂ on silicon-substrate surfaces even at low temperatures. When a substrate surface is irradiated with these UV radiations during prebaking and epitaxial growth, epilayer surface morphology and crystalline quality are much improved. Furthermore, the epitaxial growth rate seems to be enhanced photothermally by excimer laser radiations, and photochemically by Hg-Xe radiation.

Original language	English
Pages (from-to)	2224-2229
Number of pages	6
Journal	Journal of Applied Physics
Volume	61
Issue number	6
DOIs	https://doi.org/10.1063/1.337983
Publication status	Published - 1987
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.337983

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@article{d8b5c5c6bf304ab79696ef09cd827307,

title = "Prebaking and silicon epitaxial growth enhanced by UV radiation",

abstract = "UV light irradiation effects on prebaking and silicon epitaxial growth is studied. An ArF excimer laser, a KrF excimer laser, and a Hg-Xe lamp are used as light sources. The epitaxial growth is carried out using a SiH 2Cl2/H2 system under reduced pressure. ArF radiation and Hg-Xe radiation are found to be effective for volatilizing native SiO2 on silicon-substrate surfaces even at low temperatures. When a substrate surface is irradiated with these UV radiations during prebaking and epitaxial growth, epilayer surface morphology and crystalline quality are much improved. Furthermore, the epitaxial growth rate seems to be enhanced photothermally by excimer laser radiations, and photochemically by Hg-Xe radiation.",

author = "A. Ishitani and Y. Ohshita and K. Tanigaki and K. Takada and S. Itoh",

year = "1987",

doi = "10.1063/1.337983",

language = "English",

volume = "61",

pages = "2224--2229",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Prebaking and silicon epitaxial growth enhanced by UV radiation

AU - Ishitani, A.

AU - Ohshita, Y.

AU - Tanigaki, K.

AU - Takada, K.

AU - Itoh, S.

PY - 1987

Y1 - 1987

N2 - UV light irradiation effects on prebaking and silicon epitaxial growth is studied. An ArF excimer laser, a KrF excimer laser, and a Hg-Xe lamp are used as light sources. The epitaxial growth is carried out using a SiH 2Cl2/H2 system under reduced pressure. ArF radiation and Hg-Xe radiation are found to be effective for volatilizing native SiO2 on silicon-substrate surfaces even at low temperatures. When a substrate surface is irradiated with these UV radiations during prebaking and epitaxial growth, epilayer surface morphology and crystalline quality are much improved. Furthermore, the epitaxial growth rate seems to be enhanced photothermally by excimer laser radiations, and photochemically by Hg-Xe radiation.

AB - UV light irradiation effects on prebaking and silicon epitaxial growth is studied. An ArF excimer laser, a KrF excimer laser, and a Hg-Xe lamp are used as light sources. The epitaxial growth is carried out using a SiH 2Cl2/H2 system under reduced pressure. ArF radiation and Hg-Xe radiation are found to be effective for volatilizing native SiO2 on silicon-substrate surfaces even at low temperatures. When a substrate surface is irradiated with these UV radiations during prebaking and epitaxial growth, epilayer surface morphology and crystalline quality are much improved. Furthermore, the epitaxial growth rate seems to be enhanced photothermally by excimer laser radiations, and photochemically by Hg-Xe radiation.

UR - http://www.scopus.com/inward/record.url?scp=0041812838&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0041812838&partnerID=8YFLogxK

U2 - 10.1063/1.337983

DO - 10.1063/1.337983

M3 - Article

AN - SCOPUS:0041812838

VL - 61

SP - 2224

EP - 2229

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

ER -

Prebaking and silicon epitaxial growth enhanced by UV radiation

Abstract

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