Pre-existing and process induced defects in high-k gate dielectrics - Direct observation with EBIC and impact on 1/f noise

Motoyuki Sato, Jun Chen, Takashi Sekiguchi, Toyohiro Chikyow, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Microscopical investigation of leakage behaviors of Hf-based high-k gate stacks was achieved by means of electron-beam-induced current (EBIC) method. With this method, we could observe the pre-existing and stress induced defect in high-k. This pre-existing defect affect on MOSFET characteristics. We investigated in detail the relationship between the defect (in bulk high-k and interface) and 1/f noise on (110) and (100) substrates. The 1/f noise is strongly related to the degradation in the hole mobility due to the pre-existing defect or process integration damage. On the other hand, the 1/f noise of nMOSFETs is rerated to interface defects rather than electron mobility degradation.

Original languageEnglish
Title of host publication2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010
Pages86-89
Number of pages4
DOIs
Publication statusPublished - 2010 Aug 20
Externally publishedYes
Event2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010 - Grenoble, France
Duration: 2010 Jun 22010 Jun 4

Publication series

Name2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010

Conference

Conference2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010
CountryFrance
CityGrenoble
Period10/6/210/6/4

Keywords

  • 1/f noise
  • EBIC
  • High-k
  • Metal gate
  • Mobility

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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