@inproceedings{8d33f782d202442dad564df54f408bdb,
title = "Pre-existing and process induced defects in high-k gate dielectrics - Direct observation with EBIC and impact on 1/f noise",
abstract = "Microscopical investigation of leakage behaviors of Hf-based high-k gate stacks was achieved by means of electron-beam-induced current (EBIC) method. With this method, we could observe the pre-existing and stress induced defect in high-k. This pre-existing defect affect on MOSFET characteristics. We investigated in detail the relationship between the defect (in bulk high-k and interface) and 1/f noise on (110) and (100) substrates. The 1/f noise is strongly related to the degradation in the hole mobility due to the pre-existing defect or process integration damage. On the other hand, the 1/f noise of nMOSFETs is rerated to interface defects rather than electron mobility degradation.",
keywords = "1/f noise, EBIC, High-k, Metal gate, Mobility",
author = "Motoyuki Sato and Jun Chen and Takashi Sekiguchi and Toyohiro Chikyow and Jiro Yugami and Kazuto Ikeda and Yuzuru Ohji",
year = "2010",
doi = "10.1109/ICICDT.2010.5510282",
language = "English",
isbn = "9781424457748",
series = "2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010",
pages = "86--89",
booktitle = "2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010",
note = "2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010 ; Conference date: 02-06-2010 Through 04-06-2010",
}