Pre-existing and process induced defects in high-k gate dielectrics - Direct observation with EBIC and impact on 1/f noise

Motoyuki Sato; Jun Chen; Takashi Sekiguchi; Toyohiro Chikyow; Jiro Yugami; Kazuto Ikeda; Yuzuru Ohji

doi:10.1109/ICICDT.2010.5510282

Pre-existing and process induced defects in high-k gate dielectrics - Direct observation with EBIC and impact on 1/f noise

Motoyuki Sato, Jun Chen, Takashi Sekiguchi, Toyohiro Chikyow, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Microscopical investigation of leakage behaviors of Hf-based high-k gate stacks was achieved by means of electron-beam-induced current (EBIC) method. With this method, we could observe the pre-existing and stress induced defect in high-k. This pre-existing defect affect on MOSFET characteristics. We investigated in detail the relationship between the defect (in bulk high-k and interface) and 1/f noise on (110) and (100) substrates. The 1/f noise is strongly related to the degradation in the hole mobility due to the pre-existing defect or process integration damage. On the other hand, the 1/f noise of nMOSFETs is rerated to interface defects rather than electron mobility degradation.

Original language	English
Title of host publication	2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010
Pages	86-89
Number of pages	4
DOIs	https://doi.org/10.1109/ICICDT.2010.5510282
Publication status	Published - 2010 Aug 20
Externally published	Yes
Event	2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010 - Grenoble, France Duration: 2010 Jun 2 → 2010 Jun 4

Publication series

Name	2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010

Conference

Conference	2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010
Country	France
City	Grenoble
Period	10/6/2 → 10/6/4

Keywords

1/f noise
EBIC
High-k
Metal gate
Mobility

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ICICDT.2010.5510282

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Cite this

Sato, M., Chen, J., Sekiguchi, T., Chikyow, T., Yugami, J., Ikeda, K., & Ohji, Y. (2010). Pre-existing and process induced defects in high-k gate dielectrics - Direct observation with EBIC and impact on 1/f noise. In 2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010 (pp. 86-89). [5510282] (2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010). https://doi.org/10.1109/ICICDT.2010.5510282

Pre-existing and process induced defects in high-k gate dielectrics - Direct observation with EBIC and impact on 1/f noise. / Sato, Motoyuki; Chen, Jun; Sekiguchi, Takashi; Chikyow, Toyohiro; Yugami, Jiro; Ikeda, Kazuto; Ohji, Yuzuru.

2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010. 2010. p. 86-89 5510282 (2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sato, M, Chen, J, Sekiguchi, T, Chikyow, T, Yugami, J, Ikeda, K & Ohji, Y 2010, Pre-existing and process induced defects in high-k gate dielectrics - Direct observation with EBIC and impact on 1/f noise. in 2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010., 5510282, 2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010, pp. 86-89, 2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010, Grenoble, France, 10/6/2. https://doi.org/10.1109/ICICDT.2010.5510282

Sato M, Chen J, Sekiguchi T, Chikyow T, Yugami J, Ikeda K et al. Pre-existing and process induced defects in high-k gate dielectrics - Direct observation with EBIC and impact on 1/f noise. In 2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010. 2010. p. 86-89. 5510282. (2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010). https://doi.org/10.1109/ICICDT.2010.5510282

Sato, Motoyuki ; Chen, Jun ; Sekiguchi, Takashi ; Chikyow, Toyohiro ; Yugami, Jiro ; Ikeda, Kazuto ; Ohji, Yuzuru. / Pre-existing and process induced defects in high-k gate dielectrics - Direct observation with EBIC and impact on 1/f noise. 2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010. 2010. pp. 86-89 (2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010).

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abstract = "Microscopical investigation of leakage behaviors of Hf-based high-k gate stacks was achieved by means of electron-beam-induced current (EBIC) method. With this method, we could observe the pre-existing and stress induced defect in high-k. This pre-existing defect affect on MOSFET characteristics. We investigated in detail the relationship between the defect (in bulk high-k and interface) and 1/f noise on (110) and (100) substrates. The 1/f noise is strongly related to the degradation in the hole mobility due to the pre-existing defect or process integration damage. On the other hand, the 1/f noise of nMOSFETs is rerated to interface defects rather than electron mobility degradation.",

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AU - Ikeda, Kazuto

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