Power transfer-length method for full biasing contact resistance evaluation of organic field-effect transistors

Yong Xu; Takeo Minari; Kazuhito Tsukagoshi; Romain Gwoziecki; Romain Coppard; Francis Balestra; Gerard Ghibaudo

doi:10.1016/j.orgel.2011.08.026

Power transfer-length method for full biasing contact resistance evaluation of organic field-effect transistors

Yong Xu, Takeo Minari, Kazuhito Tsukagoshi, Romain Gwoziecki, Romain Coppard, Francis Balestra, Gerard Ghibaudo

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

A development of the conventional transfer-length method (TLM) for organic transistors' contact resistance evaluation is proposed. By adding the dissipated power in access resistance and in the channel, we found that TLM can be extended to the non-linear region, i.e., up to saturation regime, which is widely believed to be a barrier for TLM application now. To improve the extraction accuracy and stability, a modified TLM version is used for the operation at small gate voltages. This modified power TLM is applied to polymer and pentacene field-effect transistors and proved as a useful tool for the contact resistance evaluation as a function of gate and drain voltages from common current-voltage characterizations.

Original language	English
Pages (from-to)	2019-2024
Number of pages	6
Journal	Organic Electronics
Volume	12
Issue number	12
DOIs	https://doi.org/10.1016/j.orgel.2011.08.026
Publication status	Published - 2011 Dec
Externally published	Yes

Keywords

Contact resistance
Organic field-effect transistors
Power TLM

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
Chemistry(all)
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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title = "Power transfer-length method for full biasing contact resistance evaluation of organic field-effect transistors",

abstract = "A development of the conventional transfer-length method (TLM) for organic transistors' contact resistance evaluation is proposed. By adding the dissipated power in access resistance and in the channel, we found that TLM can be extended to the non-linear region, i.e., up to saturation regime, which is widely believed to be a barrier for TLM application now. To improve the extraction accuracy and stability, a modified TLM version is used for the operation at small gate voltages. This modified power TLM is applied to polymer and pentacene field-effect transistors and proved as a useful tool for the contact resistance evaluation as a function of gate and drain voltages from common current-voltage characterizations.",

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AU - Xu, Yong

AU - Minari, Takeo

AU - Tsukagoshi, Kazuhito

AU - Gwoziecki, Romain

AU - Coppard, Romain

AU - Balestra, Francis

AU - Ghibaudo, Gerard

PY - 2011/12

Y1 - 2011/12

N2 - A development of the conventional transfer-length method (TLM) for organic transistors' contact resistance evaluation is proposed. By adding the dissipated power in access resistance and in the channel, we found that TLM can be extended to the non-linear region, i.e., up to saturation regime, which is widely believed to be a barrier for TLM application now. To improve the extraction accuracy and stability, a modified TLM version is used for the operation at small gate voltages. This modified power TLM is applied to polymer and pentacene field-effect transistors and proved as a useful tool for the contact resistance evaluation as a function of gate and drain voltages from common current-voltage characterizations.

AB - A development of the conventional transfer-length method (TLM) for organic transistors' contact resistance evaluation is proposed. By adding the dissipated power in access resistance and in the channel, we found that TLM can be extended to the non-linear region, i.e., up to saturation regime, which is widely believed to be a barrier for TLM application now. To improve the extraction accuracy and stability, a modified TLM version is used for the operation at small gate voltages. This modified power TLM is applied to polymer and pentacene field-effect transistors and proved as a useful tool for the contact resistance evaluation as a function of gate and drain voltages from common current-voltage characterizations.

KW - Contact resistance

KW - Organic field-effect transistors

KW - Power TLM

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Power transfer-length method for full biasing contact resistance evaluation of organic field-effect transistors

Abstract

Keywords

ASJC Scopus subject areas

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