Power transfer-length method for full biasing contact resistance evaluation of organic field-effect transistors

Yong Xu, Takeo Minari, Kazuhito Tsukagoshi, Romain Gwoziecki, Romain Coppard, Francis Balestra, Gerard Ghibaudo

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

A development of the conventional transfer-length method (TLM) for organic transistors' contact resistance evaluation is proposed. By adding the dissipated power in access resistance and in the channel, we found that TLM can be extended to the non-linear region, i.e., up to saturation regime, which is widely believed to be a barrier for TLM application now. To improve the extraction accuracy and stability, a modified TLM version is used for the operation at small gate voltages. This modified power TLM is applied to polymer and pentacene field-effect transistors and proved as a useful tool for the contact resistance evaluation as a function of gate and drain voltages from common current-voltage characterizations.

Original languageEnglish
Pages (from-to)2019-2024
Number of pages6
JournalOrganic Electronics
Volume12
Issue number12
DOIs
Publication statusPublished - 2011 Dec
Externally publishedYes

Keywords

  • Contact resistance
  • Organic field-effect transistors
  • Power TLM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Power transfer-length method for full biasing contact resistance evaluation of organic field-effect transistors'. Together they form a unique fingerprint.

Cite this