Powder synthesis and ammonothermal crystal growth of GaN from metallic Ga in the presence of NH 4I

Quanxi Bao, Hiromi Sawayama, Takanori Hashimoto, Fukuma Sato, Kouji Hazu, Yuji Kagamitani, Takayuki Ishinabe, Makoto Saito, Rinzo Kayano, Daisuke Tomida, Kun Kyo, Shigefusa Chichibu, Chiaki Yokoyama, Tohru Ishiguro

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

An efficient and mild method to synthesize high-purity hexagonal GaN powder using NH 4I as a catalyst was developed. The method makes it possible to use Ga metal for ammonothermal crystal growth of GaN at a rate of 20 μm per day, which is comparable to its growth rate using polycrystalline GaN grown by hydride vapor phase epitaxy as a nutrient.

Original languageEnglish
Pages (from-to)3351-3354
Number of pages4
JournalCrystEngComm
Volume14
Issue number10
DOIs
Publication statusPublished - 2012 May 21

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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