Powder synthesis and ammonothermal crystal growth of GaN from metallic Ga in the presence of NH 4I

Quanxi Bao; Hiromi Sawayama; Takanori Hashimoto; Fukuma Sato; Kouji Hazu; Yuji Kagamitani; Takayuki Ishinabe; Makoto Saito; Rinzo Kayano; Daisuke Tomida; Kun Kyo; Shigefusa Chichibu; Chiaki Yokoyama; Tohru Ishiguro

doi:10.1039/c2ce06669f

Powder synthesis and ammonothermal crystal growth of GaN from metallic Ga in the presence of NH ₄I

Quanxi Bao, Hiromi Sawayama, Takanori Hashimoto, Fukuma Sato, Kouji Hazu, Yuji Kagamitani, Takayuki Ishinabe, Makoto Saito, Rinzo Kayano, Daisuke Tomida, Kun Kyo, Shigefusa Chichibu, Chiaki Yokoyama, Tohru Ishiguro

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

An efficient and mild method to synthesize high-purity hexagonal GaN powder using NH ₄I as a catalyst was developed. The method makes it possible to use Ga metal for ammonothermal crystal growth of GaN at a rate of 20 μm per day, which is comparable to its growth rate using polycrystalline GaN grown by hydride vapor phase epitaxy as a nutrient.

Original language	English
Pages (from-to)	3351-3354
Number of pages	4
Journal	CrystEngComm
Volume	14
Issue number	10
DOIs	https://doi.org/10.1039/c2ce06669f
Publication status	Published - 2012 May 21

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1039/c2ce06669f

Cite this

Powder synthesis and ammonothermal crystal growth of GaN from metallic Ga in the presence of NH ₄I. / Bao, Quanxi; Sawayama, Hiromi; Hashimoto, Takanori; Sato, Fukuma; Hazu, Kouji; Kagamitani, Yuji; Ishinabe, Takayuki; Saito, Makoto; Kayano, Rinzo; Tomida, Daisuke; Kyo, Kun; Chichibu, Shigefusa; Yokoyama, Chiaki; Ishiguro, Tohru.

In: CrystEngComm, Vol. 14, No. 10, 21.05.2012, p. 3351-3354.

Research output: Contribution to journal › Article › peer-review

Bao, Quanxi ; Sawayama, Hiromi ; Hashimoto, Takanori ; Sato, Fukuma ; Hazu, Kouji ; Kagamitani, Yuji ; Ishinabe, Takayuki ; Saito, Makoto ; Kayano, Rinzo ; Tomida, Daisuke ; Kyo, Kun ; Chichibu, Shigefusa ; Yokoyama, Chiaki ; Ishiguro, Tohru. / Powder synthesis and ammonothermal crystal growth of GaN from metallic Ga in the presence of NH ₄I. In: CrystEngComm. 2012 ; Vol. 14, No. 10. pp. 3351-3354.

@article{739ed99379fb4cfbbb9417348ec77287,

title = "Powder synthesis and ammonothermal crystal growth of GaN from metallic Ga in the presence of NH 4I",

abstract = "An efficient and mild method to synthesize high-purity hexagonal GaN powder using NH 4I as a catalyst was developed. The method makes it possible to use Ga metal for ammonothermal crystal growth of GaN at a rate of 20 μm per day, which is comparable to its growth rate using polycrystalline GaN grown by hydride vapor phase epitaxy as a nutrient.",

author = "Quanxi Bao and Hiromi Sawayama and Takanori Hashimoto and Fukuma Sato and Kouji Hazu and Yuji Kagamitani and Takayuki Ishinabe and Makoto Saito and Rinzo Kayano and Daisuke Tomida and Kun Kyo and Shigefusa Chichibu and Chiaki Yokoyama and Tohru Ishiguro",

year = "2012",

month = may,

day = "21",

doi = "10.1039/c2ce06669f",

language = "English",

volume = "14",

pages = "3351--3354",

journal = "CrystEngComm",

issn = "1466-8033",

publisher = "Royal Society of Chemistry",

number = "10",

}

TY - JOUR

T1 - Powder synthesis and ammonothermal crystal growth of GaN from metallic Ga in the presence of NH 4I

AU - Bao, Quanxi

AU - Sawayama, Hiromi

AU - Hashimoto, Takanori

AU - Sato, Fukuma

AU - Hazu, Kouji

AU - Kagamitani, Yuji

AU - Ishinabe, Takayuki

AU - Saito, Makoto

AU - Kayano, Rinzo

AU - Tomida, Daisuke

AU - Kyo, Kun

AU - Chichibu, Shigefusa

AU - Yokoyama, Chiaki

AU - Ishiguro, Tohru

PY - 2012/5/21

Y1 - 2012/5/21

N2 - An efficient and mild method to synthesize high-purity hexagonal GaN powder using NH 4I as a catalyst was developed. The method makes it possible to use Ga metal for ammonothermal crystal growth of GaN at a rate of 20 μm per day, which is comparable to its growth rate using polycrystalline GaN grown by hydride vapor phase epitaxy as a nutrient.

AB - An efficient and mild method to synthesize high-purity hexagonal GaN powder using NH 4I as a catalyst was developed. The method makes it possible to use Ga metal for ammonothermal crystal growth of GaN at a rate of 20 μm per day, which is comparable to its growth rate using polycrystalline GaN grown by hydride vapor phase epitaxy as a nutrient.

UR - http://www.scopus.com/inward/record.url?scp=84860354361&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84860354361&partnerID=8YFLogxK

U2 - 10.1039/c2ce06669f

DO - 10.1039/c2ce06669f

M3 - Article

AN - SCOPUS:84860354361

VL - 14

SP - 3351

EP - 3354

JO - CrystEngComm

JF - CrystEngComm

SN - 1466-8033

IS - 10

ER -

Powder synthesis and ammonothermal crystal growth of GaN from metallic Ga in the presence of NH ₄I

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this