Abstract
An efficient and mild method to synthesize high-purity hexagonal GaN powder using NH 4I as a catalyst was developed. The method makes it possible to use Ga metal for ammonothermal crystal growth of GaN at a rate of 20 μm per day, which is comparable to its growth rate using polycrystalline GaN grown by hydride vapor phase epitaxy as a nutrient.
Original language | English |
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Pages (from-to) | 3351-3354 |
Number of pages | 4 |
Journal | CrystEngComm |
Volume | 14 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2012 May 21 |
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics