The potential of the water-immersion and dry-contact acoustic imaging techniques for detecting nanometer gaps embedded in silicon is studied. The sensitivity for detecting gaps of over 10 nm in height is governed only by the lateral resolution of the imaging and is independent of the height of the gap.
|Number of pages||3|
|Journal||IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control|
|Publication status||Published - 2006 Dec 1|
ASJC Scopus subject areas
- Acoustics and Ultrasonics
- Electrical and Electronic Engineering