Postsynthesis of h-BN/Graphene Heterostructures Inside a STEM

Zheng Liu, Luiz H.G. Tizei, Yohei Sato, Yung Chang Lin, Chao Hui Yeh, Po Wen Chiu, Masami Terauchi, Sumio Iijima, Kazu Suenaga

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


Combinations of 2D materials with different physical properties can form heterostructures with modified electrical, mechanical, magnetic, and optical properties. The direct observation of a lateral heterostructure synthesis is reported by epitaxial in-plane graphene growth from the step-edge of hexagonal BN (h-BN) within a scanning transmission electron microscope chamber. Residual hydrocarbon in the chamber is the carbon source. The growth interface between h-BN and graphene is atomically identified as largely N-C bonds. This postgrowth method can form graphene nanoribbons connecting two h-BN domains with different twisting angles, as well as isolated carbon islands with arbitrary shapes embedded in the h-BN layer. The electronic properties of the vertically stacked h-BN/graphene heterostructures are investigated by electron energy-loss spectroscopy (EELS). Low-loss EELS analysis of the dielectric response suggests a robust coupling effect between the graphene and h-BN layers.

Original languageEnglish
Pages (from-to)252-259
Number of pages8
Issue number2
Publication statusPublished - 2016 Jan 13
Externally publishedYes


  • EELS
  • STEM
  • graphene
  • h-BN
  • heterostructures

ASJC Scopus subject areas

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)


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