TY - JOUR
T1 - Postfabrication independent inductance and quality factor adjustments of on-chip inductors by above-CMOS processing for rapid prototyping of radio frequency system on chips
AU - Sasaki, Yuki
AU - Kotani, Koji
PY - 2012/4/1
Y1 - 2012/4/1
N2 - The flexible adjustment of on-chip inductor characteristics after a regular complementary metal-oxide-semiconductor (CMOS) fabrication was realized by the "above-CMOS" processing technology for radio frequency (RF) system-on-a-chip (SoC) rapid prototyping. It is shown that the above-CMOS metal pattern formation in a chip-by-chip manner can both increase and decrease the inductance (L) values of on-chip inductors. It is realized by applying various planar patterns of a metal layer deposited on the passivation layer of the chip. To increase the modification range of the characteristics and to establish an independent L and quality factor (Q) adjustment scheme, we have newly developed a pre-design method and a Q-compensation method. By combining these methods, the effective L and Q values of the on-chip inductors can be independently and arbitrarily modified. The adjustment of the input impedance matching frequency of a low-noise amplifier (LNA) using this scheme has also been demonstrated.
AB - The flexible adjustment of on-chip inductor characteristics after a regular complementary metal-oxide-semiconductor (CMOS) fabrication was realized by the "above-CMOS" processing technology for radio frequency (RF) system-on-a-chip (SoC) rapid prototyping. It is shown that the above-CMOS metal pattern formation in a chip-by-chip manner can both increase and decrease the inductance (L) values of on-chip inductors. It is realized by applying various planar patterns of a metal layer deposited on the passivation layer of the chip. To increase the modification range of the characteristics and to establish an independent L and quality factor (Q) adjustment scheme, we have newly developed a pre-design method and a Q-compensation method. By combining these methods, the effective L and Q values of the on-chip inductors can be independently and arbitrarily modified. The adjustment of the input impedance matching frequency of a low-noise amplifier (LNA) using this scheme has also been demonstrated.
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U2 - 10.1143/JJAP.51.04DE06
DO - 10.1143/JJAP.51.04DE06
M3 - Article
AN - SCOPUS:84860385251
VL - 51
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
M1 - 04DE06
ER -