Post-growth thermal annealing of high N-content GaAsN by MOVPE and its effect on strain relaxation

Pawinee Klangtakai, Sakuntam Sanorpim, Kajornyod Yoodee, Wataru Ono, Fumio Nakajima, Ryuji Katayama, Kentaro Onabe

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


We report on the further investigation of the effect of post-growth thermal annealing on optical and structural properties of the high N-content GaAs0.949N0.051 layer grown on a GaAs(0 0 1) substrate by metalorganic vapor phase epitaxy (MOVPE). Photoluminescence (PL) spectroscopy was performed to measure the energy positions of the near band edge excitonic emission. The high-resolution X-ray diffraction and Raman spectroscopy were conducted to examine the lattice parameters, also the N concentration of the layers annealed at 650 °C with different annealing times. The layer subjected to thermal anneals exhibits an increasing of N incorporation, a strain relaxation and a blue shift of the PL peak energy. For such high N-containing layer, the interstitial N atoms generated in the growth process may replace the As atoms/vacancies on the lattice sites to become more stable substitutional N atoms through the thermal annealing process, which will produce the strain relaxation, in addition to an improvement of the alloy uniformity. Our results suggest the two major effects: (i) the reorganization of N and (ii) the strain relaxation in the GaAsN layer that can be explained the blue shift in the PL peak energy after annealing.

Original languageEnglish
Pages (from-to)140-144
Number of pages5
JournalJournal of Crystal Growth
Issue numberSPEC. ISS
Publication statusPublished - 2007 Jan


  • A1. High-resolution X-ray diffraction
  • A1. Optical property
  • A3. Metalorganic vapor phase epitaxy
  • B2. III-V-nitrides
  • B3. Laser diodes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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