TY - JOUR
T1 - Post-growth thermal annealing of high N-content GaAsN by MOVPE and its effect on strain relaxation
AU - Klangtakai, Pawinee
AU - Sanorpim, Sakuntam
AU - Yoodee, Kajornyod
AU - Ono, Wataru
AU - Nakajima, Fumio
AU - Katayama, Ryuji
AU - Onabe, Kentaro
N1 - Funding Information:
The authors acknowledge S. Kuboya and K. Itagaki for their helpful cooperation in the MOVPE growth. Sincere thanks are extended to M. Tirarattanasompot, Scientific and Technology Research Equipment Centre (STREC) of Chulalongkorn University, for his technical support in X-ray diffraction measurements. This work has been supported by Thailand Research Fund (contact number MRG4880018), Thailand–Japan Technology Transfer Project–Overseas Economic Cooperation Fund (TJTTP–OECF), and Graduate School, Department of Physics, Faculty of Science, Chulalongkorn University.
PY - 2007/1
Y1 - 2007/1
N2 - We report on the further investigation of the effect of post-growth thermal annealing on optical and structural properties of the high N-content GaAs0.949N0.051 layer grown on a GaAs(0 0 1) substrate by metalorganic vapor phase epitaxy (MOVPE). Photoluminescence (PL) spectroscopy was performed to measure the energy positions of the near band edge excitonic emission. The high-resolution X-ray diffraction and Raman spectroscopy were conducted to examine the lattice parameters, also the N concentration of the layers annealed at 650 °C with different annealing times. The layer subjected to thermal anneals exhibits an increasing of N incorporation, a strain relaxation and a blue shift of the PL peak energy. For such high N-containing layer, the interstitial N atoms generated in the growth process may replace the As atoms/vacancies on the lattice sites to become more stable substitutional N atoms through the thermal annealing process, which will produce the strain relaxation, in addition to an improvement of the alloy uniformity. Our results suggest the two major effects: (i) the reorganization of N and (ii) the strain relaxation in the GaAsN layer that can be explained the blue shift in the PL peak energy after annealing.
AB - We report on the further investigation of the effect of post-growth thermal annealing on optical and structural properties of the high N-content GaAs0.949N0.051 layer grown on a GaAs(0 0 1) substrate by metalorganic vapor phase epitaxy (MOVPE). Photoluminescence (PL) spectroscopy was performed to measure the energy positions of the near band edge excitonic emission. The high-resolution X-ray diffraction and Raman spectroscopy were conducted to examine the lattice parameters, also the N concentration of the layers annealed at 650 °C with different annealing times. The layer subjected to thermal anneals exhibits an increasing of N incorporation, a strain relaxation and a blue shift of the PL peak energy. For such high N-containing layer, the interstitial N atoms generated in the growth process may replace the As atoms/vacancies on the lattice sites to become more stable substitutional N atoms through the thermal annealing process, which will produce the strain relaxation, in addition to an improvement of the alloy uniformity. Our results suggest the two major effects: (i) the reorganization of N and (ii) the strain relaxation in the GaAsN layer that can be explained the blue shift in the PL peak energy after annealing.
KW - A1. High-resolution X-ray diffraction
KW - A1. Optical property
KW - A3. Metalorganic vapor phase epitaxy
KW - B2. III-V-nitrides
KW - B3. Laser diodes
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U2 - 10.1016/j.jcrysgro.2006.10.111
DO - 10.1016/j.jcrysgro.2006.10.111
M3 - Article
AN - SCOPUS:33846525013
VL - 298
SP - 140
EP - 144
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - SPEC. ISS
ER -