Possibility of CuMg for Liner-Barrier Free Interconnects

Linghan Chen, Daisuke Ando, Yuji Sutou, Masataka Yahagi, Junichi Koike

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

CuMg intermetallic compound was selected as a candidate material for liner-barrier free interconnects for advanced LSI interconnects. The blanket films of CuMg showed an excellent resistivity scaling with resistivity value of only 25 μΩcm at a film thickness of 5 nm. However, a thick MgO layer was formed within the underlying SiO layer by interface reaction between CuMg and SiO. Progressive growth of MgO made it unfavorable for CuMg to be used as liner-barrier free interconnects.

Original languageEnglish
Title of host publication2020 IEEE International Interconnect Technology Conference, IITC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages85-87
Number of pages3
ISBN (Electronic)9781728161136
DOIs
Publication statusPublished - 2020 Oct 5
Event2020 IEEE International Interconnect Technology Conference, IITC 2020 - Virtual, San Jose, United States
Duration: 2020 Oct 52020 Oct 9

Publication series

Name2020 IEEE International Interconnect Technology Conference, IITC 2020

Conference

Conference2020 IEEE International Interconnect Technology Conference, IITC 2020
Country/TerritoryUnited States
CityVirtual, San Jose
Period20/10/520/10/9

Keywords

  • Cu alternative
  • CuMg
  • intermetallic compound
  • transition-metal aluminide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Metals and Alloys
  • Electronic, Optical and Magnetic Materials

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