Possibility of Cu-Mn alloy for TFT gate electrodes

Junichi Koike; K. Neishi; J. Iijima; Yuji Suto

Possibility of Cu-Mn alloy for TFT gate electrodes

Junichi Koike, K. Neishi, J. Iijima, Yuji Suto

ENG - Materials Science

Research output: Contribution to conference › Paper › peer-review

5 Citations (Scopus)

Abstract

Cu-Mn alloy was deposited on SiO₂ or on glass substrates. After heat treatment, the alloy film showed resistivity decrease to the level of pure Cu, together with good adhesion and diffusion barrier property with the substrates. Ohmic contact was also obtained for ITO/Cu-Mn film both before and after heat treatment.

Original language	English
Pages	2037-2040
Number of pages	4
Publication status	Published - 2007 Dec 1
Event	14th International Display Workshops, IDW '07 - Sapporo, Japan Duration: 2007 Dec 5 → 2007 Dec 5

Other

Other	14th International Display Workshops, IDW '07
Country	Japan
City	Sapporo
Period	07/12/5 → 07/12/5

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging
Atomic and Molecular Physics, and Optics

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title = "Possibility of Cu-Mn alloy for TFT gate electrodes",

abstract = "Cu-Mn alloy was deposited on SiO2 or on glass substrates. After heat treatment, the alloy film showed resistivity decrease to the level of pure Cu, together with good adhesion and diffusion barrier property with the substrates. Ohmic contact was also obtained for ITO/Cu-Mn film both before and after heat treatment.",

author = "Junichi Koike and K. Neishi and J. Iijima and Yuji Suto",

year = "2007",

month = dec,

day = "1",

language = "English",

pages = "2037--2040",

note = "14th International Display Workshops, IDW '07 ; Conference date: 05-12-2007 Through 05-12-2007",

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TY - CONF

T1 - Possibility of Cu-Mn alloy for TFT gate electrodes

AU - Koike, Junichi

AU - Neishi, K.

AU - Iijima, J.

AU - Suto, Yuji

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Cu-Mn alloy was deposited on SiO2 or on glass substrates. After heat treatment, the alloy film showed resistivity decrease to the level of pure Cu, together with good adhesion and diffusion barrier property with the substrates. Ohmic contact was also obtained for ITO/Cu-Mn film both before and after heat treatment.

AB - Cu-Mn alloy was deposited on SiO2 or on glass substrates. After heat treatment, the alloy film showed resistivity decrease to the level of pure Cu, together with good adhesion and diffusion barrier property with the substrates. Ohmic contact was also obtained for ITO/Cu-Mn film both before and after heat treatment.

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M3 - Paper

AN - SCOPUS:43349097284

SP - 2037

EP - 2040

T2 - 14th International Display Workshops, IDW '07

Y2 - 5 December 2007 through 5 December 2007

ER -