Possibility of Cu-Mn alloy for TFT gate electrodes

J. Koike, K. Neishi, J. Iijima, Y. Sutou

Research output: Contribution to conferencePaperpeer-review

5 Citations (Scopus)


Cu-Mn alloy was deposited on SiO2 or on glass substrates. After heat treatment, the alloy film showed resistivity decrease to the level of pure Cu, together with good adhesion and diffusion barrier property with the substrates. Ohmic contact was also obtained for ITO/Cu-Mn film both before and after heat treatment.

Original languageEnglish
Number of pages4
Publication statusPublished - 2007 Dec 1
Event14th International Display Workshops, IDW '07 - Sapporo, Japan
Duration: 2007 Dec 52007 Dec 5


Other14th International Display Workshops, IDW '07

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging
  • Atomic and Molecular Physics, and Optics


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