Possibility of Cu-Mn alloy for TFT gate electrodes

Junichi Koike, K. Neishi, J. Iijima, Yuji Suto

Research output: Contribution to conferencePaperpeer-review

5 Citations (Scopus)

Abstract

Cu-Mn alloy was deposited on SiO2 or on glass substrates. After heat treatment, the alloy film showed resistivity decrease to the level of pure Cu, together with good adhesion and diffusion barrier property with the substrates. Ohmic contact was also obtained for ITO/Cu-Mn film both before and after heat treatment.

Original languageEnglish
Pages2037-2040
Number of pages4
Publication statusPublished - 2007 Dec 1
Event14th International Display Workshops, IDW '07 - Sapporo, Japan
Duration: 2007 Dec 52007 Dec 5

Other

Other14th International Display Workshops, IDW '07
CountryJapan
CitySapporo
Period07/12/507/12/5

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging
  • Atomic and Molecular Physics, and Optics

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