Possibilities and problems of self-forming barrier process for advanced LSI metallization

J. Koike, J. Iijima, K. Neishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Self-forming barrier layer was investigated by deposition of Cu-Mn alloy films on dielectric layer. For the dielectric materials, conventional TEOS-SiO2 and advanced low-k SiOC were employed. Thin barrier layer could be successfully formed on SiO2 and dense SiOC. On the contrary, porous SiOC had a problem with Cu penetration in an as-deposited state. In order to use the self-forming barrier process on advanced porous low-k materials, surface treatment and pore sealing may be necessary.

Original languageEnglish
Title of host publicationAdvanced Metallization Conference 2007, AMC 2007
Pages3-9
Number of pages7
Publication statusPublished - 2008 Nov 10
Event24th Session of the Advanced Metallization Conference 2007, AMC 2007 - Tokyo, Japan
Duration: 2007 Oct 222007 Oct 24

Publication series

NameAdvanced Metallization Conference (AMC)
ISSN (Print)1540-1766

Other

Other24th Session of the Advanced Metallization Conference 2007, AMC 2007
CountryJapan
CityTokyo
Period07/10/2207/10/24

ASJC Scopus subject areas

  • Materials Science(all)
  • Industrial and Manufacturing Engineering

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