Positronium contact density in crystalline and amorphous SiO2

Yasuyuki Nagashima, Yasuyoshi Nagai, Toshio Hyodo

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

The positronium relative contact density in crystalline and amorphous SiO2 has been determined using the angular correlation of annihilation radiation method. The determined values are 0.31 ± 0.02 and 0.95 ± 0.03, respectively. The difference between these two values reflects the difference in the Ps states.

Original languageEnglish
Pages (from-to)567-569
Number of pages3
JournalMaterials Science Forum
Volume363-365
Publication statusPublished - 2001 Jan 1
Event12th International Conference on Positron Annihilation - Munchen, Germany
Duration: 2000 Aug 62000 Aug 12

Keywords

  • Binding energy
  • Contact density
  • Magnetic quenching effect
  • SiO

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Positronium contact density in crystalline and amorphous SiO<sub>2</sub>'. Together they form a unique fingerprint.

  • Cite this