Positronium contact density in crystalline and amorphous SiO2

Yasuyuki Nagashima; Yasuyoshi Nagai; Toshio Hyodo

Positronium contact density in crystalline and amorphous SiO₂

Yasuyuki Nagashima, Yasuyoshi Nagai, Toshio Hyodo

Materials Design Division

Research output: Contribution to journal › Conference article

6 Citations (Scopus)

Abstract

The positronium relative contact density in crystalline and amorphous SiO₂ has been determined using the angular correlation of annihilation radiation method. The determined values are 0.31 ± 0.02 and 0.95 ± 0.03, respectively. The difference between these two values reflects the difference in the Ps states.

Original language	English
Pages (from-to)	567-569
Number of pages	3
Journal	Materials Science Forum
Volume	363-365
Publication status	Published - 2001 Jan 1
Event	12th International Conference on Positron Annihilation - Munchen, Germany Duration: 2000 Aug 6 → 2000 Aug 12

Keywords

Binding energy
Contact density
Magnetic quenching effect
SiO

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Nagashima, Y., Nagai, Y., & Hyodo, T. (2001). Positronium contact density in crystalline and amorphous SiO₂. Materials Science Forum, 363-365, 567-569.

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title = "Positronium contact density in crystalline and amorphous SiO2",

abstract = "The positronium relative contact density in crystalline and amorphous SiO2 has been determined using the angular correlation of annihilation radiation method. The determined values are 0.31 ± 0.02 and 0.95 ± 0.03, respectively. The difference between these two values reflects the difference in the Ps states.",

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T1 - Positronium contact density in crystalline and amorphous SiO2

AU - Nagashima, Yasuyuki

AU - Nagai, Yasuyoshi

AU - Hyodo, Toshio

PY - 2001/1/1

Y1 - 2001/1/1

N2 - The positronium relative contact density in crystalline and amorphous SiO2 has been determined using the angular correlation of annihilation radiation method. The determined values are 0.31 ± 0.02 and 0.95 ± 0.03, respectively. The difference between these two values reflects the difference in the Ps states.

AB - The positronium relative contact density in crystalline and amorphous SiO2 has been determined using the angular correlation of annihilation radiation method. The determined values are 0.31 ± 0.02 and 0.95 ± 0.03, respectively. The difference between these two values reflects the difference in the Ps states.

KW - Binding energy

KW - Contact density

KW - Magnetic quenching effect

KW - SiO

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M3 - Conference article

AN - SCOPUS:0035000274

VL - 363-365

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EP - 569

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

T2 - 12th International Conference on Positron Annihilation

Y2 - 6 August 2000 through 12 August 2000

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