Abstract
The positronium relative contact density in crystalline and amorphous SiO2 has been determined using the angular correlation of annihilation radiation method. The determined values are 0.31 ± 0.02 and 0.95 ± 0.03, respectively. The difference between these two values reflects the difference in the Ps states.
Original language | English |
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Pages (from-to) | 567-569 |
Number of pages | 3 |
Journal | Materials Science Forum |
Volume | 363-365 |
Publication status | Published - 2001 Jan 1 |
Event | 12th International Conference on Positron Annihilation - Munchen, Germany Duration: 2000 Aug 6 → 2000 Aug 12 |
Keywords
- Binding energy
- Contact density
- Magnetic quenching effect
- SiO
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering