TY - JOUR
T1 - Positron lifetime and coincidence Doppler broadening study of vacancy-oxygen complexes in Si
T2 - 9th International Workshop on Slow Positron Beam Techniques
AU - Hasegawa, M.
AU - Tang, Z.
AU - Nagai, Y.
AU - Nonaka, T.
AU - Nakamura, K.
N1 - Funding Information:
We thank Messrs. H. Sunaga and H. Takizawa from the JAERI-Takasaki Institute for their electron irradiation under the Inter-University program of the Research Center for Nuclear Science and Technology, University of Tokyo. This work is partially supported by Grant-in-Aid for Scientific Research of the Ministry of Education, Culture, Sports, Science and Technology (Grant nos. 10450229, 12358005, and 13305044).
PY - 2002/6/21
Y1 - 2002/6/21
N2 - Positron lifetime and coincidence Doppler broadening (CDB) techniques, combined with first-principles calculations of positron annihilation characteristics, are employed to study vacancy-oxygen (VO) complexes in Czochralski-grown silicon (Cz-Si). In the experiments, the positron lifetimes and CDB spectra were measured as functions of post-irradiation annealing temperature for a series of electron-irradiated Cz-Si samples. Though the longer lifetimes for the defects are nearly constant at about 300 ps, the CDB spectra exhibit a distinct stage around 350 °C, indicating a marked change in the defect nature after the post-irradiation annealing. These experimental results are compared with the calculated positron lifetimes and CDB spectra for various vacancy-oxygen complexes in Si. This comparison clarifies that, after annealing at 350 °C, the irradiation-induced divacancies and A centers aggregate into more stable V 3 O and V 4 O 2 .
AB - Positron lifetime and coincidence Doppler broadening (CDB) techniques, combined with first-principles calculations of positron annihilation characteristics, are employed to study vacancy-oxygen (VO) complexes in Czochralski-grown silicon (Cz-Si). In the experiments, the positron lifetimes and CDB spectra were measured as functions of post-irradiation annealing temperature for a series of electron-irradiated Cz-Si samples. Though the longer lifetimes for the defects are nearly constant at about 300 ps, the CDB spectra exhibit a distinct stage around 350 °C, indicating a marked change in the defect nature after the post-irradiation annealing. These experimental results are compared with the calculated positron lifetimes and CDB spectra for various vacancy-oxygen complexes in Si. This comparison clarifies that, after annealing at 350 °C, the irradiation-induced divacancies and A centers aggregate into more stable V 3 O and V 4 O 2 .
KW - First-principles calculation
KW - Positron annihilation
KW - Si
KW - Vacancy-oxygen complexes
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U2 - 10.1016/S0169-4332(02)00092-2
DO - 10.1016/S0169-4332(02)00092-2
M3 - Conference article
AN - SCOPUS:0037150949
VL - 194
SP - 76
EP - 83
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 1-4
Y2 - 16 September 2001 through 22 September 2001
ER -