Positron lifetime and coincidence Doppler broadening study of vacancy-oxygen complexes in Si: Experiments and first-principles calculations

M. Hasegawa, Z. Tang, Y. Nagai, T. Nonaka, K. Nakamura

Research output: Contribution to journalConference article

17 Citations (Scopus)

Abstract

Positron lifetime and coincidence Doppler broadening (CDB) techniques, combined with first-principles calculations of positron annihilation characteristics, are employed to study vacancy-oxygen (VO) complexes in Czochralski-grown silicon (Cz-Si). In the experiments, the positron lifetimes and CDB spectra were measured as functions of post-irradiation annealing temperature for a series of electron-irradiated Cz-Si samples. Though the longer lifetimes for the defects are nearly constant at about 300 ps, the CDB spectra exhibit a distinct stage around 350 °C, indicating a marked change in the defect nature after the post-irradiation annealing. These experimental results are compared with the calculated positron lifetimes and CDB spectra for various vacancy-oxygen complexes in Si. This comparison clarifies that, after annealing at 350 °C, the irradiation-induced divacancies and A centers aggregate into more stable V 3 O and V 4 O 2 .

Original languageEnglish
Pages (from-to)76-83
Number of pages8
JournalApplied Surface Science
Volume194
Issue number1-4
DOIs
Publication statusPublished - 2002 Jun 21
Event9th International Workshop on Slow Positron Beam Techniques - Dresden, Germany
Duration: 2001 Sep 162001 Sep 22

Keywords

  • First-principles calculation
  • Positron annihilation
  • Si
  • Vacancy-oxygen complexes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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