Positron annihilation in electron-irradiated SixGe1-x bulk crystals

Atsuo Kawasuso, Sohei Okada, Masashi Suezawa, Tatsuya Honda, Ichiro Yonenaga

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4 Citations (Scopus)

Abstract

Position lifetime measurement for SixGe1-x bulk crystals has been performed. The bulk lifetime of positron in the crystals varied between those for Ge and Si. The dependence of the lifetime on the alloy composition showed an abrupt change at x= 0.17-0.20 which seems to be correlated with that of the band gap energy. After 3 MeV electron-irradiation, vacancy-type defects giving rise to the lifetimes of ∼280 and ∼330 ps were detected for 0.63≤x≤0.82 and 0.20≤x≤0.40, respectively, but not for x≤0.17. The composition-dependent vacancy production was interpreted in terms of the thermal stability of vacancies with the composition.

Original languageEnglish
Pages (from-to)2916-2918
Number of pages3
JournalJournal of Applied Physics
Volume81
Issue number6
DOIs
Publication statusPublished - 1997 Mar 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Kawasuso, A., Okada, S., Suezawa, M., Honda, T., & Yonenaga, I. (1997). Positron annihilation in electron-irradiated SixGe1-x bulk crystals. Journal of Applied Physics, 81(6), 2916-2918. https://doi.org/10.1063/1.363965