Abstract
We have developed photosensitive polyimides synthesized by block-copolymerization for KrF lithography. The polyimides were synthesized from aliphatic tetracarboxylic dianhydrides and aliphatic diamines. Aliphatic rings have been introduced to reduce absorption at 248 nm (KrF). We have obtained line patterns of 0.17 μm at a dose of 170 mJ/cm2, and line and space patterns of 0.25 μm at a dose of 190 mJ/cm2.
| Original language | English |
|---|---|
| Pages (from-to) | 552-558 |
| Number of pages | 7 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3999 (I) |
| DOIs | |
| Publication status | Published - 2000 Jan 1 |
| Event | Advances in Resist Technology and Processing XVII - Santa Clara, CA, USA Duration: 2000 Feb 28 → 2000 Mar 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
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Cite this
Itatani, T., Gorwadkar, S., Fukushima, T., Komuro, M., Itatani, H., Tomoi, M., Sakamoto, T., & Matsumoto, S. (2000). Positive photosensitive polyimide synthesized by block-copolymerization for KrF lithography. Proceedings of SPIE - The International Society for Optical Engineering, 3999 (I), 552-558. https://doi.org/10.1117/12.388339