Positive-negative inversion of silicon based resist materials: Poly(di-n-hexylsilane) for ion beam irradiation

Shu Seki, Kenichi Kanzaki, Yoichi Yoshida, Seiichi Tagawa, Hiromi Shibata, Keisuke Asai, Kenkichi Ishigure

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The present paper describes radiation induced solubility changes and emission spectra of poly(di-n-hexylsilane) and their temperature dependence on. Poly(di-n-hexylsilane) has a clear phase transition temperature at around 312 K with change of the silicon skeleton structure. Radiation induced reactions differed greatly above and below this temperature, showing large emission spectral changes. High LET (linear energy transfer; energy deposition rate of incident particles per 100 Å ion beams induced main chain crosslinking in the polymer. PDHS behaved as a negative-type resist material below 312 K, although it had been previously confirmed that PDHS had shown positive-type resist properties for UV light, electron beams, X-rays, low LET proton beams at any temperature range and for higher LET He ion beams at a temperature above 312 K.

Original languageEnglish
Pages (from-to)5361-5364
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number8
Publication statusPublished - 1997 Aug 1
Externally publishedYes

Keywords

  • Gel
  • Ion beam
  • Negative resist
  • PDHS
  • Polysilane
  • Positive resist
  • Sol

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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