Position controlled GaN nano-structures fabricated by low energy focused ion beam system

Takahiro Nagata, Parhat Ahmet, Takashi Koida, Shigefusa F. Chichibu, Toyohiro Chikyow

Research output: Contribution to journalConference articlepeer-review


We have demonstrated position controlled GaN nano structures with a combination of surface treatments and nucleation sites control assisted by low energy focused ion beam. Ga ions in the range of 100 eV - 10 keV were irradiated onto the surface of the As-terminated Si (100) to create the nucleation sites. The deposited Ga atoms migrated on the surface and were trapped at the nucleation sites to form Ga droplets. Subsequently an excited atomic nitrogen source was supplied to the surface. By SEM observation, the GaN microcrystals of diameter about 800 nm were found to be allocated every 2 μm periodically on the substrates, and cathodoluminescence peaks from GaN nano structures were observed.

Original languageEnglish
Pages (from-to)605-609
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2003
EventRadiation Effects and Ion-Beam Processing of Materials - Boston, MA., United States
Duration: 2003 Dec 12003 Dec 5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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