Population inversion and negative dynamic conductivity in optically pumped graphene

Akira Satou; F. T. Vasko; Taiichi Otsuji; V. Ryzhii

doi:10.1109/SISPAD.2009.5290199

Population inversion and negative dynamic conductivity in optically pumped graphene

Akira Satou, F. T. Vasko, Taiichi Otsuji, V. Ryzhii

Broadband Engineering Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We study nonequilibrium carriers (electrons and holes) in an intrinsic graphene at low temperatures under infrared optical pumping. We calculate the energy distributions of carriers using a quasi-classical kinetic equation. It is found that the nonequilibrium distributions are determined by an interplay between weak energy relaxation on acoustic phonons and generation-recombination processes as well as by the effect of pumping saturation. We show that at certain pumping power density the population inversion as well as the dynamic negative conductivity can take place in terahertz and far-infrared frequencies, suggesting the possibility of utilization of graphene under optical pumping for optoelectronic applications, in particular, lasing at such frequencies.

Original language	English
Title of host publication	SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
DOIs	https://doi.org/10.1109/SISPAD.2009.5290199
Publication status	Published - 2009 Dec 1
Event	SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices - San Diego, CA, United States Duration: 2009 Sep 9 → 2009 Sep 11

Other

Other	SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
Country	United States
City	San Diego, CA
Period	09/9/9 → 09/9/11

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modelling and Simulation

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Satou, A, Vasko, FT, Otsuji, T & Ryzhii, V 2009, Population inversion and negative dynamic conductivity in optically pumped graphene. in SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices., 5290199, SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States, 09/9/9. https://doi.org/10.1109/SISPAD.2009.5290199

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abstract = "We study nonequilibrium carriers (electrons and holes) in an intrinsic graphene at low temperatures under infrared optical pumping. We calculate the energy distributions of carriers using a quasi-classical kinetic equation. It is found that the nonequilibrium distributions are determined by an interplay between weak energy relaxation on acoustic phonons and generation-recombination processes as well as by the effect of pumping saturation. We show that at certain pumping power density the population inversion as well as the dynamic negative conductivity can take place in terahertz and far-infrared frequencies, suggesting the possibility of utilization of graphene under optical pumping for optoelectronic applications, in particular, lasing at such frequencies.",

author = "Akira Satou and Vasko, {F. T.} and Taiichi Otsuji and V. Ryzhii",

year = "2009",

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doi = "10.1109/SISPAD.2009.5290199",

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AU - Satou, Akira

AU - Vasko, F. T.

AU - Otsuji, Taiichi

AU - Ryzhii, V.

PY - 2009/12/1

Y1 - 2009/12/1

N2 - We study nonequilibrium carriers (electrons and holes) in an intrinsic graphene at low temperatures under infrared optical pumping. We calculate the energy distributions of carriers using a quasi-classical kinetic equation. It is found that the nonequilibrium distributions are determined by an interplay between weak energy relaxation on acoustic phonons and generation-recombination processes as well as by the effect of pumping saturation. We show that at certain pumping power density the population inversion as well as the dynamic negative conductivity can take place in terahertz and far-infrared frequencies, suggesting the possibility of utilization of graphene under optical pumping for optoelectronic applications, in particular, lasing at such frequencies.

AB - We study nonequilibrium carriers (electrons and holes) in an intrinsic graphene at low temperatures under infrared optical pumping. We calculate the energy distributions of carriers using a quasi-classical kinetic equation. It is found that the nonequilibrium distributions are determined by an interplay between weak energy relaxation on acoustic phonons and generation-recombination processes as well as by the effect of pumping saturation. We show that at certain pumping power density the population inversion as well as the dynamic negative conductivity can take place in terahertz and far-infrared frequencies, suggesting the possibility of utilization of graphene under optical pumping for optoelectronic applications, in particular, lasing at such frequencies.

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U2 - 10.1109/SISPAD.2009.5290199

DO - 10.1109/SISPAD.2009.5290199

M3 - Conference contribution

AN - SCOPUS:74349097612

SN - 9781424439492

BT - SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices

T2 - SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices

Y2 - 9 September 2009 through 11 September 2009

ER -

Population inversion and negative dynamic conductivity in optically pumped graphene

Abstract

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