Poly(N-alkylmethacrylamide) LB films with short-branched alkyl side chains for a self-developed positive photoresist

Yinzhong Guo, Masaya Mitsuishi, Tokuji Miyashita

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

An ultrathin film of poly(N-neopentylmethacrylamide) (PnPMA) prepared by the Langmuir-Blodgett technique was examined as a high-resolution self-developed photoresist. The properties of the LB films were investigated using UV absorption spectra and X-ray diffraction. Fine lines and spaces with positive-tone patterns on the LB film were achieved solely by deep UV irradiation (self-development). A fine gold pattern with a resolution of 1.5 μm was obtained by etching patterned LB film on gold film deposited on a glass substrate, indicating that 20 layers of LB film (about 20 nm) is stable against wet etching.

Original languageEnglish
Pages (from-to)3548-3551
Number of pages4
JournalMacromolecules
Volume34
Issue number11
DOIs
Publication statusPublished - 2001 May 22

ASJC Scopus subject areas

  • Organic Chemistry
  • Polymers and Plastics
  • Inorganic Chemistry
  • Materials Chemistry

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