Polymer material as a gate dielectric for graphene field-effect-transistor applications

Myung Ho Jung, Hiroyuki Handa, Ryota Takahashi, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Epitaxial-graphene field-effect transistor (EG-FET) with a polymer gate dielectric was fabricated and their electrical characteristics were investigated. The epitaxial graphene layer was formed on a semi-insulating 6H-SiC substrate by a high-temperature annealing in ultrahigh vacuum. The formation of graphene was confirmed by low-energy electron diffraction (LEED), Raman-scattering spectroscopy and X-ray photoelectron spectroscopy (XPS). The polymer gate dielectric (ZEP520a) layer was formed by spin coating, which exhibits good dielectric properties without noticeable structural degradation of the graphene layer. The EG-FETs with this polymer gate dielectric shows an n-type characteristic, with the field-effect mobility of 580 cm2 V-1s-1.

Original languageEnglish
Article number070107
JournalJapanese journal of applied physics
Volume50
Issue number7 PART 1
DOIs
Publication statusPublished - 2011 Jul 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Polymer material as a gate dielectric for graphene field-effect-transistor applications'. Together they form a unique fingerprint.

  • Cite this