Polycrystalline silicon film formation at low temperature using ultra-high-frequency plasma enhanced chemical vapor deposition

B. Mebarki, S. Sumiya, R. Yoshida, M. Ito, M. Hori, T. Goto, S. Samukawa, T. Tsukada

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

An ultra-high frequency (UHF) plasma system of 500 MHZ was employed to study the formation of polycrystalline silicon thin films with crystalline fraction of nearly 75% and 82%. The thin films were synthesized at low substrate temperatures of 100 and 300 °C, respectively, by using UHF plasma employed silane/hydrogen mixture gases. In situ ellipsometry analysis confirmed that a relatively thin amorphous intermediate layer less that 15 nm in thickness was formed at a substrate temperature of 300 °C in the early stage of the growth.

Original languageEnglish
Pages (from-to)16-19
Number of pages4
JournalMaterials Letters
Volume41
Issue number1
DOIs
Publication statusPublished - 1999 Oct

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Polycrystalline silicon film formation at low temperature using ultra-high-frequency plasma enhanced chemical vapor deposition'. Together they form a unique fingerprint.

Cite this