Polarized XAFS study of Al K-edge for m-plane AlGaN films

T. Miyanaga, T. Azuhata, K. Nakajima, H. Nagoya, K. Hazu, S. F. Chichibu

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Local structures around Al atoms in high-quality m-plane AlxGa1-xN films (x=0.32 and 0.58) deposited on m-plane GaN substrates by the NH3 source molecular beam epitaxy method were investigated by Al K-edge X-ray absorption fine structure (XAFS) for the first time. XAFS spectra were measured using a linearly-polarized X-ray source from synchrotron radiation for three different directions; along the c-, a-, and m-axes. The interatomic distances along the a-axis are close to Ga-Ga distance in GaN, indicating that the local structures are strongly affected by GaN substrates. The localization of Al atoms was observed for the Al0.32Ga0.68N film.

Original languageEnglish
Article number012031
JournalJournal of Physics: Conference Series
Issue number1
Publication statusPublished - 2014
Event1st Conference on Light and Particle Beams in Materials Science 2013, LPBMS 2013 - Tsukuba, Japan
Duration: 2013 Aug 292013 Aug 31

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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