Local structures around Al atoms in high-quality m-plane AlxGa1-xN films (x=0.32 and 0.58) deposited on m-plane GaN substrates by the NH3 source molecular beam epitaxy method were investigated by Al K-edge X-ray absorption fine structure (XAFS) for the first time. XAFS spectra were measured using a linearly-polarized X-ray source from synchrotron radiation for three different directions; along the c-, a-, and m-axes. The interatomic distances along the a-axis are close to Ga-Ga distance in GaN, indicating that the local structures are strongly affected by GaN substrates. The localization of Al atoms was observed for the Al0.32Ga0.68N film.
|Journal||Journal of Physics: Conference Series|
|Publication status||Published - 2014 Jan 1|
|Event||1st Conference on Light and Particle Beams in Materials Science 2013, LPBMS 2013 - Tsukuba, Japan|
Duration: 2013 Aug 29 → 2013 Aug 31
ASJC Scopus subject areas
- Physics and Astronomy(all)