Polarized light emission from antiphase boundaries acting as slanting quantum wells in GaP InP short-period superlattices

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Abstract

Optical properties of anti-phase boundaries (APBs) in monolayer superlattices of GaP InP are studied. Determining selectively the arrangements of In and Ga atoms around APBs by cross-sectional scanning tunneling microscopy, it is found that atomic layers of InP on (1̄11) and (1̄10), sandwiched between the domains of superlattices, are formed on APBs. Polarized cathodoluminescence spectroscopy in a transmission electron microscope suggested that the InP layers act as quantum wells oriented on a slant with respect to the substrate and they emit light linearly polarized parallel to the layers.

Original languageEnglish
Article number121307
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume72
Issue number12
DOIs
Publication statusPublished - 2005 Sep 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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