Optical properties of anti-phase boundaries (APBs) in monolayer superlattices of GaP InP are studied. Determining selectively the arrangements of In and Ga atoms around APBs by cross-sectional scanning tunneling microscopy, it is found that atomic layers of InP on (1̄11) and (1̄10), sandwiched between the domains of superlattices, are formed on APBs. Polarized cathodoluminescence spectroscopy in a transmission electron microscope suggested that the InP layers act as quantum wells oriented on a slant with respect to the substrate and they emit light linearly polarized parallel to the layers.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2005 Sep 15|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics