Polarization switching phenomena in semipolar Inx Ga1-x N/GaN quantum well active layers

M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, T. Mukai

Research output: Contribution to journalArticlepeer-review

77 Citations (Scopus)

Abstract

We report the observation of optical polarization switching in Inx Ga1-x N/GaN quantum well active layers, using semipolar { 11 2̄ 2 } planes. When the In composition is less than ∼30%, the emissions related to the top and second valence bands are polarized along the [1 1̄ 00] and perpendicular [1̄ 1̄ 23] directions, respectively, similar to earlier studies. On the contrary, as the In composition increases above 30%, the polarizations switch, indicating a crossover between the two valence bands. Because the polarization degree is less sensitive to the well width, the observed polarization switch is ascribed to the InN deformation potentials.

Original languageEnglish
Article number233303
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume78
Issue number23
DOIs
Publication statusPublished - 2008 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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