Polarization modulation of nanotrenches in GaN (0001)/(0001′) by surface hydrogenation

Tomoe Yayama, Yanlin Gao, Susumu Okada, Toyohiro Chikyow

Research output: Contribution to journalArticle

Abstract

Using first-principles total-energy calculations within the framework of the density functional theory, we show that nanometer-scale trenches excavated in GaN with (0001) and (0001) surfaces cause a variable electrostatic potential difference, which is tunable by controlling the hydrogen coverage of the surfaces. A positive potential difference of 3.53V is induced between clean (0001) and (000-1) surfaces in nanotrenches, while a negative potential difference of %5.93V is induced in nanotrenches with fully hydrogenated surfaces. The value of the potential difference strongly depends on the H coverage of the surfaces. Nanotrenches excavated in GaN with polar surfaces can supply electricity for various nanoscale devices consisting of molecules, clusters, and atoms inserted into the trenches.

Original languageEnglish
Article number111002
JournalJapanese journal of applied physics
Volume56
Issue number11
DOIs
Publication statusPublished - 2017 Nov

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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