Polarity dependent radiation hardness of GaN

Masayuki Matsuo, Takayuki Murayama, Kazuto Koike, Shigehiko Sasa, Mitsuaki Yano, Shun Ichi Gonda, Akira Uedono, Ryoya Ishigami, Kyo Kume, Tomomi Ohtomo, Erika Furukawa, Yoshiki Yamazaki, Kazunobu Kojima, Shigefusa Chichibu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The lattice polarity dependent tolerance of displacement damage was studied for GaN by irradiating its +c and -c surfaces with a proton beam of 8 MeV. In agreement with the in-situ monitored increase of electrical resistance during irradiation, post-irradiation analysis by positron annihilation measurement revealed that the +c surface had a higher tolerance compared with that of the -c one. These results indicate that the defect introduction rate depends on the incident axis of proton beams.

Original languageEnglish
Title of host publicationIMFEDK 2015 - 2015 International Meeting for Future of Electron Devices, Kansai
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages50-51
Number of pages2
ISBN (Electronic)9781479986149
DOIs
Publication statusPublished - 2015 Jul 14
Event13th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2015 - Kyoto, Japan
Duration: 2015 Jun 42015 Jun 5

Publication series

NameIMFEDK 2015 - 2015 International Meeting for Future of Electron Devices, Kansai

Other

Other13th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2015
Country/TerritoryJapan
CityKyoto
Period15/6/415/6/5

Keywords

  • +c and -c surfaces of GaN
  • 8 MeV proton beam
  • Positron annihilation
  • Radiation hardness

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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