Polarity control of ZnO films on (0001) Al2 O3 by Cr-compound intermediate layers

J. S. Park, S. K. Hong, T. Minegishi, S. H. Park, I. H. Im, T. Hanada, M. W. Cho, T. Yao, J. W. Lee, J. Y. Lee

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Abstract

This letter presents a reliable and very easy method for selective growth of polarity controlled ZnO films on (0001) Al2 O3 substrates by plasma-assisted molecular-beam epitaxy. Cr-compound intermediate layers are used to control the crystal polarity of ZnO films on (0001) Al2 O3. ZnO films grown on rocksalt structure CrN/(0001) Al2 O3 shows Zn polarity, while those grown on rhombohedral Cr2 O3 (0001) Al2 O3 shows O polarity. Possible interface atomic arrangements for both heterostructures are proposed.

Original languageEnglish
Article number201907
JournalApplied Physics Letters
Volume90
Issue number20
DOIs
Publication statusPublished - 2007 May 28

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Park, J. S., Hong, S. K., Minegishi, T., Park, S. H., Im, I. H., Hanada, T., Cho, M. W., Yao, T., Lee, J. W., & Lee, J. Y. (2007). Polarity control of ZnO films on (0001) Al2 O3 by Cr-compound intermediate layers. Applied Physics Letters, 90(20), [201907]. https://doi.org/10.1063/1.2740190