Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metalorganic vapor phase epitaxy

Jinyeop Yoo, Kanako Shojiki, Tomoyuki Tanikawa, Shigeyuki Kuboya, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

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4 Citations (Scopus)

Abstract

We report on the polarity control of GaN regrown on pulsed-laser-deposition-grown N-polar AlN on a metalorganic-vapor-phase-epitaxy-grown Gapolar GaN template. The polarity of the regrown GaN, which was confirmed using aqueous KOH solutions, can be inverted from that of AlN by inserting a low-temperature GaN (LT-GaN) buffer layer. We hypothetically ascribe the Ga-polarity selection of GaN on the LT-GaN buffer layer to the mixed polarity of LT-GaN grains and higher growth rate of the Ga-polar grain, which covers up the N-polar grain during the initial stage of the high-temperature growth. The X-ray rocking curve analysis revealed that the edge-dislocation density in the N-polar regrown GaN is 5 to 8 times smaller than that in the Ga-polar regrown GaN. N-polar GaN grows directly on N-polar AlN at higher temperatures. Therefore, nucleus islands grow larger than those of LT-GaN and the area fraction of coalescence boundaries between islands, where edge dislocations emerge, becomes smaller.

Original languageEnglish
Article number05FA04
JournalJapanese journal of applied physics
Volume55
Issue number5
DOIs
Publication statusPublished - 2016 May

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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