Polarity control of GaN epilayers grown on ZnO templates

Takuma Suzuki, Hang Ju Ko, Agus Setiawan, Jung Jin Kim, Koh Saitoh, Masami Terauchi, Takafumi Yao

    Research output: Contribution to journalArticlepeer-review

    17 Citations (Scopus)


    We report the successful growth of Ga-polar GaN epilayers on O-polar ZnO templates pre-deposited on c-sapphire. Prior to GaN growth, NH3 is exposed onto the ZnO template. The polarity of the GaN layers is confirmed by etching of the surface and by conversion beam electron diffraction (CBED), while the O-polar ZnO is confirmed by CBED. It is suggested that the NH 3 pre-exposure helps form a Zn3N2 layer, which possesses inversion symmetry and inverts the crystal from anion polar to cation polar.

    Original languageEnglish
    Pages (from-to)519-521
    Number of pages3
    JournalMaterials Science in Semiconductor Processing
    Issue number5-6
    Publication statusPublished - 2003 Oct


    • CBED
    • GaN
    • Hetero interface
    • Molecular beam epitaxy
    • Polarity
    • ZnO

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering


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