Point defects generated by oxidation of silicon crystal surface

M. Suezawa; Y. Yamamoto; M. Suemitsu; I. Yonenaga

doi:10.1016/j.physb.2009.08.262

Point defects generated by oxidation of silicon crystal surface

M. Suezawa, Y. Yamamoto, M. Suemitsu, I. Yonenaga

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

To study the generation of interstitials and vacancies due to oxidation of silicon crystals, we applied a quenching method, namely, oxidation at high temperatures in mixed gases of water vapor and hydrogen gas followed by the quenching into water. Contrary to our expectation that the interstitial concentration is high, the vacancy concentration generated due to the short period of oxidation is higher than that of the thermal equilibrium concentration.

Original language	English
Pages (from-to)	5156-5158
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	404
Issue number	23-24
DOIs	https://doi.org/10.1016/j.physb.2009.08.262
Publication status	Published - 2009 Dec 15

Keywords

Hydrogen
Oxidation
Silicon
Vacancy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "To study the generation of interstitials and vacancies due to oxidation of silicon crystals, we applied a quenching method, namely, oxidation at high temperatures in mixed gases of water vapor and hydrogen gas followed by the quenching into water. Contrary to our expectation that the interstitial concentration is high, the vacancy concentration generated due to the short period of oxidation is higher than that of the thermal equilibrium concentration.",

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AU - Suezawa, M.

AU - Yamamoto, Y.

AU - Suemitsu, M.

AU - Yonenaga, I.

PY - 2009/12/15

Y1 - 2009/12/15

N2 - To study the generation of interstitials and vacancies due to oxidation of silicon crystals, we applied a quenching method, namely, oxidation at high temperatures in mixed gases of water vapor and hydrogen gas followed by the quenching into water. Contrary to our expectation that the interstitial concentration is high, the vacancy concentration generated due to the short period of oxidation is higher than that of the thermal equilibrium concentration.

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KW - Hydrogen

KW - Oxidation

KW - Silicon

KW - Vacancy

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