Point defects generated by oxidation of silicon crystal surface

M. Suezawa, Y. Yamamoto, M. Suemitsu, I. Yonenaga

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


To study the generation of interstitials and vacancies due to oxidation of silicon crystals, we applied a quenching method, namely, oxidation at high temperatures in mixed gases of water vapor and hydrogen gas followed by the quenching into water. Contrary to our expectation that the interstitial concentration is high, the vacancy concentration generated due to the short period of oxidation is higher than that of the thermal equilibrium concentration.

Original languageEnglish
Pages (from-to)5156-5158
Number of pages3
JournalPhysica B: Condensed Matter
Issue number23-24
Publication statusPublished - 2009 Dec 15


  • Hydrogen
  • Oxidation
  • Silicon
  • Vacancy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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