Abstract
To study the generation of interstitials and vacancies due to oxidation of silicon crystals, we applied a quenching method, namely, oxidation at high temperatures in mixed gases of water vapor and hydrogen gas followed by the quenching into water. Contrary to our expectation that the interstitial concentration is high, the vacancy concentration generated due to the short period of oxidation is higher than that of the thermal equilibrium concentration.
Original language | English |
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Pages (from-to) | 5156-5158 |
Number of pages | 3 |
Journal | Physica B: Condensed Matter |
Volume | 404 |
Issue number | 23-24 |
DOIs | |
Publication status | Published - 2009 Dec 15 |
Keywords
- Hydrogen
- Oxidation
- Silicon
- Vacancy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering