Point defect reaction in (Al)GaInP STQW lasers enhanced by laser operation

A. Ihara, Y. Ohno, S. Takeda, S. Nagao, D. Diffily, Y. Satoh, K. Shimoyama, N. Hosoi

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

We have found that a large number of dislocation loops of interstitial type are introduced in the active region of (Al)GaInP strained triple quantum wells (STQW) lasers by the effect of laser operation. These loops were always generated in the lasers, the driving current of which increased gradually as operating time increased. We have shown that the dislocation cores act as nonradiative recombination centers and therefore the loops cause the gradual degradation. The migration of interstitial atoms enhanced by laser operation are essential for the degradation of the lasers.

Original languageEnglish
Pages (from-to)1050-1053
Number of pages4
JournalPhysica B: Condensed Matter
Volume273-274
DOIs
Publication statusPublished - 1999 Dec 15
Externally publishedYes
EventProceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA
Duration: 1999 Jul 261999 Jul 30

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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