Point defect mobility in hydrogen pre-implanted vanadium under electron irradiation

P. P. Liu; S. N. Jiang; Y. F. Du; Q. Zhan; H. F. Zhao; W. T. Han; X. O. Yi; S. Ohnuki; F. R. Wan

doi:10.1016/j.matchar.2021.111014

Point defect mobility in hydrogen pre-implanted vanadium under electron irradiation

P. P. Liu, S. N. Jiang, Y. F. Du, Q. Zhan, H. F. Zhao, W. T. Han, X. O. Yi, S. Ohnuki, F. R. Wan

Research output: Contribution to journal › Article › peer-review

Abstract

Mobility of point defect (vacancy and interstitial) is a critical factor for irradiation resistance of nuclear materials like vanadium. Hydrogen (H) atoms generated by nuclear transmutation can strongly affect the migration mechanism of point defect. Microstructural evolution and point defect behavior in vanadium with and without H-pre-implantation have been investigated by in-situ annealing and electron irradiation by using high voltage electron microscopy (HVEM). The migration energy of vacancies and the one of interstitials were calculated to be about 1.5 eV and 0.3 eV based on the growth speed and the number density of dislocation loops at 573–773 K, respectively. The surface effect of samples on measurement of migration energy and the interaction between hydrogen and point defect were also discussed.

Original language	English
Article number	111014
Journal	Materials Characterization
Volume	174
DOIs	https://doi.org/10.1016/j.matchar.2021.111014
Publication status	Published - 2021 Apr
Externally published	Yes

Keywords

H-defects interaction
In-situ annealing
In-situ HVEM
Migration energy of point defect
Nonlinear method
Vanadium

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Point defect mobility in hydrogen pre-implanted vanadium under electron irradiation",

abstract = "Mobility of point defect (vacancy and interstitial) is a critical factor for irradiation resistance of nuclear materials like vanadium. Hydrogen (H) atoms generated by nuclear transmutation can strongly affect the migration mechanism of point defect. Microstructural evolution and point defect behavior in vanadium with and without H-pre-implantation have been investigated by in-situ annealing and electron irradiation by using high voltage electron microscopy (HVEM). The migration energy of vacancies and the one of interstitials were calculated to be about 1.5 eV and 0.3 eV based on the growth speed and the number density of dislocation loops at 573–773 K, respectively. The surface effect of samples on measurement of migration energy and the interaction between hydrogen and point defect were also discussed.",

keywords = "H-defects interaction, In-situ annealing, In-situ HVEM, Migration energy of point defect, Nonlinear method, Vanadium",

author = "Liu, {P. P.} and Jiang, {S. N.} and Du, {Y. F.} and Q. Zhan and Zhao, {H. F.} and Han, {W. T.} and Yi, {X. O.} and S. Ohnuki and Wan, {F. R.}",

note = "Funding Information: This work is supported by the National Natural Science Foundation of China (Grant Nos. U1637210, 11775018, 51571021, 51701014), the Beijing Natural Science Foundation (Grant No. 2182043) and the Open Research Fund of Key Laboratory of Space Utilization, Chinese Academy of Sciences (No. LSU-KFJJ-2019-06). The authors gratefully acknowledge the HVEM laboratory in Hokkaido University, Japan. The help from Professor N. Hashimoto at Hokkaido University were highly appreciated. Publisher Copyright: {\textcopyright} 2021 Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",

year = "2021",

month = apr,

doi = "10.1016/j.matchar.2021.111014",

language = "English",

volume = "174",

journal = "Materials Characterization",

issn = "1044-5803",

publisher = "Elsevier Inc.",

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TY - JOUR

T1 - Point defect mobility in hydrogen pre-implanted vanadium under electron irradiation

AU - Liu, P. P.

AU - Jiang, S. N.

AU - Du, Y. F.

AU - Zhan, Q.

AU - Zhao, H. F.

AU - Han, W. T.

AU - Yi, X. O.

AU - Ohnuki, S.

AU - Wan, F. R.

N1 - Funding Information: This work is supported by the National Natural Science Foundation of China (Grant Nos. U1637210, 11775018, 51571021, 51701014), the Beijing Natural Science Foundation (Grant No. 2182043) and the Open Research Fund of Key Laboratory of Space Utilization, Chinese Academy of Sciences (No. LSU-KFJJ-2019-06). The authors gratefully acknowledge the HVEM laboratory in Hokkaido University, Japan. The help from Professor N. Hashimoto at Hokkaido University were highly appreciated. Publisher Copyright: © 2021 Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/4

Y1 - 2021/4

N2 - Mobility of point defect (vacancy and interstitial) is a critical factor for irradiation resistance of nuclear materials like vanadium. Hydrogen (H) atoms generated by nuclear transmutation can strongly affect the migration mechanism of point defect. Microstructural evolution and point defect behavior in vanadium with and without H-pre-implantation have been investigated by in-situ annealing and electron irradiation by using high voltage electron microscopy (HVEM). The migration energy of vacancies and the one of interstitials were calculated to be about 1.5 eV and 0.3 eV based on the growth speed and the number density of dislocation loops at 573–773 K, respectively. The surface effect of samples on measurement of migration energy and the interaction between hydrogen and point defect were also discussed.

AB - Mobility of point defect (vacancy and interstitial) is a critical factor for irradiation resistance of nuclear materials like vanadium. Hydrogen (H) atoms generated by nuclear transmutation can strongly affect the migration mechanism of point defect. Microstructural evolution and point defect behavior in vanadium with and without H-pre-implantation have been investigated by in-situ annealing and electron irradiation by using high voltage electron microscopy (HVEM). The migration energy of vacancies and the one of interstitials were calculated to be about 1.5 eV and 0.3 eV based on the growth speed and the number density of dislocation loops at 573–773 K, respectively. The surface effect of samples on measurement of migration energy and the interaction between hydrogen and point defect were also discussed.

KW - H-defects interaction

KW - In-situ annealing

KW - In-situ HVEM

KW - Migration energy of point defect

KW - Nonlinear method

KW - Vanadium

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Point defect mobility in hydrogen pre-implanted vanadium under electron irradiation

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