Pliant epitaxial ionic oxides on silicon

Dmitry Kukuruznyak; Harald Reichert; Kenji Ohmori; Parhat Ahmet; Toyohiro Chikyo

doi:10.1002/adma.200702234

Pliant epitaxial ionic oxides on silicon

Dmitry Kukuruznyak, Harald Reichert, Kenji Ohmori, Parhat Ahmet, Toyohiro Chikyo

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A new ionic structure that accommodates local atomic alterations as easily as native SiO₂ CRN was investigated. Composition spread thin films of the RE₂O₃-Al₂O₃-HfO₂ systems were deposited onto Si(001) substrates by combinatorial PLD. Each elemental oxide stripe was deposited in multiple steps to ensure atomic mixing of cations. A single wedge stripe of Al₂O₃ was deposited with the help of a moving shutter and pulsed ablation. The tapered stripe had a thickness ranging from 0 Å to approximately 4 Å. The substrate was rotated and two other stripes of RE₂O₃ and HfO₂ were deposited under identical conditions. It was observed that the new ionic structure easily becomes amorphous and features low viscosity at high temperatures.

Original language	English
Pages (from-to)	3827-3831
Number of pages	5
Journal	Advanced Materials
Volume	20
Issue number	20
DOIs	https://doi.org/10.1002/adma.200702234
Publication status	Published - 2008 Oct 17
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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@article{97099def847448fa9782c2b84244c73d,

title = "Pliant epitaxial ionic oxides on silicon",

abstract = "A new ionic structure that accommodates local atomic alterations as easily as native SiO2 CRN was investigated. Composition spread thin films of the RE2O3-Al2O3-HfO2 systems were deposited onto Si(001) substrates by combinatorial PLD. Each elemental oxide stripe was deposited in multiple steps to ensure atomic mixing of cations. A single wedge stripe of Al2O3 was deposited with the help of a moving shutter and pulsed ablation. The tapered stripe had a thickness ranging from 0 {\AA} to approximately 4 {\AA}. The substrate was rotated and two other stripes of RE2O3 and HfO2 were deposited under identical conditions. It was observed that the new ionic structure easily becomes amorphous and features low viscosity at high temperatures.",

author = "Dmitry Kukuruznyak and Harald Reichert and Kenji Ohmori and Parhat Ahmet and Toyohiro Chikyo",

year = "2008",

month = oct,

day = "17",

doi = "10.1002/adma.200702234",

language = "English",

volume = "20",

pages = "3827--3831",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "20",

}

TY - JOUR

T1 - Pliant epitaxial ionic oxides on silicon

AU - Kukuruznyak, Dmitry

AU - Reichert, Harald

AU - Ohmori, Kenji

AU - Ahmet, Parhat

AU - Chikyo, Toyohiro

PY - 2008/10/17

Y1 - 2008/10/17

N2 - A new ionic structure that accommodates local atomic alterations as easily as native SiO2 CRN was investigated. Composition spread thin films of the RE2O3-Al2O3-HfO2 systems were deposited onto Si(001) substrates by combinatorial PLD. Each elemental oxide stripe was deposited in multiple steps to ensure atomic mixing of cations. A single wedge stripe of Al2O3 was deposited with the help of a moving shutter and pulsed ablation. The tapered stripe had a thickness ranging from 0 Å to approximately 4 Å. The substrate was rotated and two other stripes of RE2O3 and HfO2 were deposited under identical conditions. It was observed that the new ionic structure easily becomes amorphous and features low viscosity at high temperatures.

AB - A new ionic structure that accommodates local atomic alterations as easily as native SiO2 CRN was investigated. Composition spread thin films of the RE2O3-Al2O3-HfO2 systems were deposited onto Si(001) substrates by combinatorial PLD. Each elemental oxide stripe was deposited in multiple steps to ensure atomic mixing of cations. A single wedge stripe of Al2O3 was deposited with the help of a moving shutter and pulsed ablation. The tapered stripe had a thickness ranging from 0 Å to approximately 4 Å. The substrate was rotated and two other stripes of RE2O3 and HfO2 were deposited under identical conditions. It was observed that the new ionic structure easily becomes amorphous and features low viscosity at high temperatures.

UR - http://www.scopus.com/inward/record.url?scp=55749110201&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=55749110201&partnerID=8YFLogxK

U2 - 10.1002/adma.200702234

DO - 10.1002/adma.200702234

M3 - Article

AN - SCOPUS:55749110201

VL - 20

SP - 3827

EP - 3831

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 20

ER -

Pliant epitaxial ionic oxides on silicon

Abstract

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