Pliant epitaxial ionic oxides on silicon

Dmitry Kukuruznyak, Harald Reichert, Kenji Ohmori, Parhat Ahmet, Toyohiro Chikyo

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

A new ionic structure that accommodates local atomic alterations as easily as native SiO2 CRN was investigated. Composition spread thin films of the RE2O3-Al2O3-HfO2 systems were deposited onto Si(001) substrates by combinatorial PLD. Each elemental oxide stripe was deposited in multiple steps to ensure atomic mixing of cations. A single wedge stripe of Al2O3 was deposited with the help of a moving shutter and pulsed ablation. The tapered stripe had a thickness ranging from 0 Å to approximately 4 Å. The substrate was rotated and two other stripes of RE2O3 and HfO2 were deposited under identical conditions. It was observed that the new ionic structure easily becomes amorphous and features low viscosity at high temperatures.

Original languageEnglish
Pages (from-to)3827-3831
Number of pages5
JournalAdvanced Materials
Volume20
Issue number20
DOIs
Publication statusPublished - 2008 Oct 17
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Pliant epitaxial ionic oxides on silicon'. Together they form a unique fingerprint.

Cite this