Plastic thin-film transistor with Printed electrodes by using nanoprinting with h-PDMS stamp

The gate, source, and drain electrode patterns of organic thin film transistor to use as a switching device for a flexible display device was designed and fabricated in microcontact printing process with h-PDMS stamp. The OTFT array with dielectric layer and organic active semiconductor layer deposited at a temperature lower than 40 V. The microcontact printing process using SAM and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even sub-micron size, and reduced the fabrication process by 10 steps compared with photolithography process. Since the fabrication process was done in room temperature, there was no pattern shrinkage, transformation, and bending problem appeared. Also, it was possible to improve electric field mobility, to decrease contact resistance, to increase close packing of molecules by SAM, and to reduce threshold voltage by using a big dielectric.