Plastic deformation of GaAs at low temperatures

T. Suzuki, T. Yasutomi, T. Tokuoka, I. Yonenaga

Research output: Contribution to journalArticlepeer-review

73 Citations (Scopus)


Intrinsic GaAs single crystals were deformed under hydrostatic pressure at temperatures down to 130K. Slip lines indicate that, below 300 K, deformation occurs by 1/2 (101)(111) slip with frequent cross-slip. Above 300 K the crystal is so brittle that no slip lines are observed and the critical resolved shear stress tcfalls steeply with increasing temperature. Below 300 K the temperature dependence of tcis weak, resulting in a hump in the tc-T curve at about 300 K, as found in InP at 420 K. In this region the activation volume is several b3b being the length of the Burgers vector, and the activation energy is about 35kT. Transmission electron microscopy of specimens deformed at low temperatures reveals long screw dislocations, which are narrowly or not at all dissociated. Semiquantitative analysis indicates that, at low temperatures, plastic deformation occurs by kink pair formation of non-dissociated shuffle screw dislocations.

Original languageEnglish
Pages (from-to)2637-2654
Number of pages18
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Issue number11
Publication statusPublished - 1999 Nov
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)
  • Metals and Alloys


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