TY - JOUR
T1 - Plasma waves in two-dimensional electron-hole system in gated graphene heterostructures
AU - Ryzhii, V.
AU - Satou, A.
AU - Otsuji, T.
N1 - Funding Information:
This work was financially supported by the Grant-in-Aid for Scientific Research (S) from the Japan Society for Promotion of Science, Japan.
PY - 2007
Y1 - 2007
N2 - Plasma waves in the two-dimensional electron-hole system in a graphene-based heterostructure controlled by a highly conducting gate are studied theoretically. The energy spectra of two-dimensional electrons and holes are assumed to be conical (neutrinolike), i.e., corresponding to their zero effective masses. Using the developed model, we calculate the spectrum of plasma waves (spatio-temporal variations of the electron and hole densities and the self-consistent electric potential). We find that the sufficiently long plasma waves exhibit a linear (soundlike) dispersion, with the wave velocity determined by the gate layer thickness, the gate voltage, and the temperature. The plasma wave velocity in graphene heterostructures can significantly exceed the plasma wave velocity in the commonly employed semiconductor gated heterostructures. The gated graphene heterostructures can be used in different voltage tunable terahertz devices which utilize the plasma waves.
AB - Plasma waves in the two-dimensional electron-hole system in a graphene-based heterostructure controlled by a highly conducting gate are studied theoretically. The energy spectra of two-dimensional electrons and holes are assumed to be conical (neutrinolike), i.e., corresponding to their zero effective masses. Using the developed model, we calculate the spectrum of plasma waves (spatio-temporal variations of the electron and hole densities and the self-consistent electric potential). We find that the sufficiently long plasma waves exhibit a linear (soundlike) dispersion, with the wave velocity determined by the gate layer thickness, the gate voltage, and the temperature. The plasma wave velocity in graphene heterostructures can significantly exceed the plasma wave velocity in the commonly employed semiconductor gated heterostructures. The gated graphene heterostructures can be used in different voltage tunable terahertz devices which utilize the plasma waves.
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U2 - 10.1063/1.2426904
DO - 10.1063/1.2426904
M3 - Article
AN - SCOPUS:33847764705
VL - 101
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 2
M1 - 024509
ER -