Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120-300 nm have been studied as room temperature plasma wave detectors of 0.7 THz electromagnetic radiation. In agreement with the plasma wave detection theory, the response was found to depend on the gate length and the gate bias. The obtained values of responsivity (≤200 VW) and noise equivalent power ( 10-10 W Hz0.5) demonstrate the potential of Si MOSFETs as sensitive detectors of terahertz radiation.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)