Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, M. S. Shur

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Abstract

Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120-300 nm have been studied as room temperature plasma wave detectors of 0.7 THz electromagnetic radiation. In agreement with the plasma wave detection theory, the response was found to depend on the gate length and the gate bias. The obtained values of responsivity (≤200 VW) and noise equivalent power ( 10-10 W Hz0.5) demonstrate the potential of Si MOSFETs as sensitive detectors of terahertz radiation.

Original languageEnglish
Article number253511
JournalApplied Physics Letters
Volume89
Issue number25
DOIs
Publication statusPublished - 2006 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Tauk, R., Teppe, F., Boubanga, S., Coquillat, D., Knap, W., Meziani, Y. M., Gallon, C., Boeuf, F., Skotnicki, T., Fenouillet-Beranger, C., Maude, D. K., Rumyantsev, S., & Shur, M. S. (2006). Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power. Applied Physics Letters, 89(25), [253511]. https://doi.org/10.1063/1.2410215