Plasma oscillations in terahertz photomixing high-electron-mobility transistor structure on p+-substrate

Akira Satou, Vladimir Vyurkov, Irina Khmyrova

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The excitation of plasma oscillations in a channel of a high-electron-mobility transistor (HEMT) induced by optical illumination for terahertz (THz) generation requires a back contact to collect photogenerated holes. In particular, it could be a heavily doped p+-substrate. The effect of such a substrate on plasma oscillations in the channel is considered. Both possible reasons for oscillation damping, hole collisions and heavy hole-light hole transitions, are taken into account. We show that for properly designed structures, the influence of the p+-substrate on plasma oscillations can be negligible.

Original languageEnglish
Pages (from-to)L566-L568
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number4 B
DOIs
Publication statusPublished - 2004 Apr 15
Externally publishedYes

Keywords

  • High-electron-mobility transistor
  • Photomixing
  • Plasma oscillations
  • Terahertz

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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