In this work we present experimental results on room temperature terahertz (THz) detection/emission from nanotransistors as well as double grating gates structures. It shows that the emission spectra from GaN/AlGaN HEMT transistor can be successfully interpreted in the frame of the Dyakonov-Shur model which predicts that by heating/accelerating the electrons up to velocities comparable with plasma wave velocity can lead to instability and generation of plasma waves in the transistor channel. Studies of the current dependence of THz detection by InGaAs based HEMT is also presented. It is shown that in realistic transistor structures the room temperature resonant THz detection can be observed only upon applying a current high enough to produce fast/hot electrons.
|Number of pages||5|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2008|
|Event||15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15 - Tokyo, Japan|
Duration: 2007 Jul 23 → 2007 Jul 27
ASJC Scopus subject areas
- Condensed Matter Physics