Plasma oscillations in nanotransistors for room temperature detection and emission of terahertz radiation

A. El Fatimy, R. Tauk, S. Boubanga, F. Teppe, N. Dyakonova, W. Knap, J. Lyonnet, Y. M. Meziani, T. Otsuji, M. A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Roelens, Ch Gaquiere, D. Theron, A. Cappy

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)

Abstract

In this work we present experimental results on room temperature terahertz (THz) detection/emission from nanotransistors as well as double grating gates structures. It shows that the emission spectra from GaN/AlGaN HEMT transistor can be successfully interpreted in the frame of the Dyakonov-Shur model which predicts that by heating/accelerating the electrons up to velocities comparable with plasma wave velocity can lead to instability and generation of plasma waves in the transistor channel. Studies of the current dependence of THz detection by InGaAs based HEMT is also presented. It is shown that in realistic transistor structures the room temperature resonant THz detection can be observed only upon applying a current high enough to produce fast/hot electrons.

Original languageEnglish
Pages (from-to)244-248
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number1
DOIs
Publication statusPublished - 2008
Event15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15 - Tokyo, Japan
Duration: 2007 Jul 232007 Jul 27

ASJC Scopus subject areas

  • Condensed Matter Physics

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