Plasma nonlinearities and terahertz detection by field effect transistors

W. Knap, D. Coquillat, N. Dyakonova, O. Klimenko, D. But, F. Teppe, M. Sakowicz, J. Lusakowski, T. Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

On overview of recent results concerning the plasma excitations in Field Effect Transistor is presented. We report on high magnetic field studies and we show evidences that the plasma waves are indeed propagating in the transistor channel. We show also how FET based THz detectors parameters can be determined using the static current voltage characteristics. The role of loading effects and temperature to enhance the THz responsivity is also demonstrated.

Original languageEnglish
Title of host publication2012 19th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2012
Pages108-111
Number of pages4
DOIs
Publication statusPublished - 2012 Aug 13
Event2012 19th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2012 - Warsaw, Poland
Duration: 2012 May 212012 May 23

Publication series

Name2012 19th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2012
Volume1

Other

Other2012 19th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2012
CountryPoland
CityWarsaw
Period12/5/2112/5/23

Keywords

  • High electron mobility transistors
  • plasma waves
  • semiconductors
  • terahertz wave detection

ASJC Scopus subject areas

  • Computer Networks and Communications

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