Plasma mechanism of terahertz photomixing in high-electron mobility transistor under interband photoexcitation

V. Ryzhii, I. Khmyrova, A. Satou, P. O. Vaccaro, T. Aida, M. Shur

Research output: Contribution to journalArticlepeer-review

62 Citations (Scopus)

Abstract

We show that modulated near-infrared radiation can generate terahertz plasma oscillations in the channel of a high-electron mobility transistor. This effect is associated with a temporarily periodic injection of the electrons photoexcited by modulated near-infrared radiation into the transistor channel. The excitation of the plasma oscillations has the resonant character. It results in the pertinent excitation of the electric current in the external circuit that can be used for generation of terahertz electromagnetic radiation.

Original languageEnglish
Pages (from-to)5756-5760
Number of pages5
JournalJournal of Applied Physics
Volume92
Issue number10
DOIs
Publication statusPublished - 2002 Nov 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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