Abstract
Interactions between Ar-O2 mixture plasmas and Zn thin film on Tris(8-hydroxyquinolinato) aluminium (Alq3) were investigated on the basis of nondestructive depth analyses of chemical bonding states at the Zn/Alq3 interface via hard x-ray photoelectron spectroscopy (HXPES). The HXPES Zn 2p3/2 spectrum measured at take-off angle (TOA)=20° clearly shows significant increase of the Zn-O bond after Ar-O2 mixture plasma exposure. This result indicated that the Ar-O2 mixture plasma exposure has made it possible to form ZnO thin films on organic materials due to oxidation of Zn thin film. The HXPES C 1s spectra measurement at TOA=80° and 42° indicated that the Ar-O2 mixture plasma exposure does not give significant damage to the chemical bonding states in regions up to about 20nm from the Zn/Alq3 interface. Whereas, the results of HXPES measurement at a TOA=20° suggested that the oxygen radicals through the Zn thin film cause oxidation of Alq3 at shallower region up to about a few nm from the interface.
Original language | English |
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Pages (from-to) | S271-S275 |
Journal | Surface and Coatings Technology |
Volume | 228 |
Issue number | SUPPL.1 |
DOIs | |
Publication status | Published - 2013 Aug 15 |
Keywords
- Hard X-ray photoelectron spectroscopy
- Inductively-coupled plasma
- Low-damage process
- Low-inductance antenna
- Polymer
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry