Plasma interaction with Zn nano layer on organic materials for analysis of early stage of inorganic/organic hybrid multi-layer formation

Ken Cho, Kosuke Takenaka, Yuichi Setsuhara

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Interactions between Ar-O2 mixture plasmas and Zn thin film on Tris(8-hydroxyquinolinato) aluminium (Alq3) were investigated on the basis of nondestructive depth analyses of chemical bonding states at the Zn/Alq3 interface via hard x-ray photoelectron spectroscopy (HXPES). The HXPES Zn 2p3/2 spectrum measured at take-off angle (TOA)=20° clearly shows significant increase of the Zn-O bond after Ar-O2 mixture plasma exposure. This result indicated that the Ar-O2 mixture plasma exposure has made it possible to form ZnO thin films on organic materials due to oxidation of Zn thin film. The HXPES C 1s spectra measurement at TOA=80° and 42° indicated that the Ar-O2 mixture plasma exposure does not give significant damage to the chemical bonding states in regions up to about 20nm from the Zn/Alq3 interface. Whereas, the results of HXPES measurement at a TOA=20° suggested that the oxygen radicals through the Zn thin film cause oxidation of Alq3 at shallower region up to about a few nm from the interface.

Original languageEnglish
Pages (from-to)S271-S275
JournalSurface and Coatings Technology
Volume228
Issue numberSUPPL.1
DOIs
Publication statusPublished - 2013 Aug 15

Keywords

  • Hard X-ray photoelectron spectroscopy
  • Inductively-coupled plasma
  • Low-damage process
  • Low-inductance antenna
  • Polymer

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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