Plasma-induced damage and its control in plasma etching processes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The pulse-time-modulated (TM) plasma could reduce the ultraviolet (UV) photon induced defects in SiO2 film during the plasma etching process. In the TM plasma, the radio-frequency (RF) power for discharging plasma was modulated at a pulse-timing of a few tens microseconds. During the pulse-off period, UV photons radiation drastically decreased by reduction of electron energy in the plasma. As a result, UV photon-induced defects in SiO2 film, such as E′ center, could be reduced in the case of using the TM plasma, as compared with CW plasma. Additionally, we found that the state of E′ center generated in the TM plasma had lower energy level than that caused by the CW plasma. Then, lower temperature annealing was needed for the recovery of E′ center in the case of using TM plasma, whereas the CW plasma process needed higher temperature annealing. These results clarified that the exciting state of UV photon-induced defects in SiO2 film could be lowered by using the TM plasma.

Original languageEnglish
Title of host publicationProceedings 2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT
Pages101-104
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
Event2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT - Austin, TX, United States
Duration: 2007 May 302007 Jun 1

Publication series

NameProceedings 2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

Other

Other2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT
CountryUnited States
CityAustin, TX
Period07/5/3007/6/1

Keywords

  • Plasma materials-processing applications
  • Pulse time modulation
  • Semiconductor defects
  • Ultraviolet radiation effects

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Samukawa, S. (2007). Plasma-induced damage and its control in plasma etching processes. In Proceedings 2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT (pp. 101-104). [4299549] (Proceedings 2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT). https://doi.org/10.1109/ICICDT.2007.4299549