Plasma effects in lateral Schottky junction tunneling transit-time terahertz oscillator

V. Ryzhii, A. Satou, I. Khmyrova, M. Ryzhii, T. Otsuji, V. Mitin, M. S. Shur

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

We study the plasma oscillations in a two-dimensional electron channel with a reverse-biased Schottky junction. Using the developed model we show that the negative dynamic conductivity of the Schottky junction associated with the tunneling injection and electrontransit- time effect can result in the self-excitation of plasma oscillations (plasma instability) in the quasineutral portion of the channel serving as a resonant cavity. The spectrum of plasma oscillations and the conditions of their self-excitations are expressed via the structure parameters. The instability can be used in a novel diode device - lateral Schottky junction tunneling transit-time terahertz oscillator.

Original languageEnglish
Pages (from-to)228-233
Number of pages6
JournalJournal of Physics: Conference Series
Volume38
Issue number1
DOIs
Publication statusPublished - 2006 May 10

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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