TY - GEN
T1 - Plasma assisted multichip-to-wafer direct bonding technology for self-assembly based 3D integration
AU - Hashiguchi, H.
AU - Yonekura, H.
AU - Fukushima, T.
AU - Murugesan, M.
AU - Kino, H.
AU - Lee, K. W.
AU - Tanaka, T.
AU - Koyanagi, M.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/15
Y1 - 2015/7/15
N2 - We demonstrated plasma-assisted multichip-to-wafer direct bonding for self-assembly based 3D integration processes. We mainly evaluated the bonding yields and bonding strengths of dies obtained by multichip-to-wafer direct oxide-oxide bonding, and compared with wafer-to-wafer direct oxide-oxide bonding in their bonding properties. In this study, we employed thermal oxide and chemical mechanical polish (CMP)-treated oxide formed by plasma-enhanced chemical vapor deposition (PECVD) with tetraethyl orthosilicate (TEOS) as bonding interfaces, and in addition, N2 or Ar plasmas were used for the surface activation. We finally introduce multichip-to-wafer direct oxide-oxide bonding between self-assembled dies and wafers having the PECVD-oxide layer.
AB - We demonstrated plasma-assisted multichip-to-wafer direct bonding for self-assembly based 3D integration processes. We mainly evaluated the bonding yields and bonding strengths of dies obtained by multichip-to-wafer direct oxide-oxide bonding, and compared with wafer-to-wafer direct oxide-oxide bonding in their bonding properties. In this study, we employed thermal oxide and chemical mechanical polish (CMP)-treated oxide formed by plasma-enhanced chemical vapor deposition (PECVD) with tetraethyl orthosilicate (TEOS) as bonding interfaces, and in addition, N2 or Ar plasmas were used for the surface activation. We finally introduce multichip-to-wafer direct oxide-oxide bonding between self-assembled dies and wafers having the PECVD-oxide layer.
UR - http://www.scopus.com/inward/record.url?scp=84942103533&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84942103533&partnerID=8YFLogxK
U2 - 10.1109/ECTC.2015.7159789
DO - 10.1109/ECTC.2015.7159789
M3 - Conference contribution
AN - SCOPUS:84942103533
T3 - Proceedings - Electronic Components and Technology Conference
SP - 1458
EP - 1463
BT - 2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015
Y2 - 26 May 2015 through 29 May 2015
ER -