Plasma assisted multichip-to-wafer direct bonding technology for self-assembly based 3D integration

H. Hashiguchi; H. Yonekura; T. Fukushima; M. Murugesan; H. Kino; K. W. Lee; T. Tanaka; M. Koyanagi

doi:10.1109/ECTC.2015.7159789

Plasma assisted multichip-to-wafer direct bonding technology for self-assembly based 3D integration

H. Hashiguchi, H. Yonekura, T. Fukushima, M. Murugesan, H. Kino, K. W. Lee, T. Tanaka, M. Koyanagi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Citations (Scopus)

Abstract

We demonstrated plasma-assisted multichip-to-wafer direct bonding for self-assembly based 3D integration processes. We mainly evaluated the bonding yields and bonding strengths of dies obtained by multichip-to-wafer direct oxide-oxide bonding, and compared with wafer-to-wafer direct oxide-oxide bonding in their bonding properties. In this study, we employed thermal oxide and chemical mechanical polish (CMP)-treated oxide formed by plasma-enhanced chemical vapor deposition (PECVD) with tetraethyl orthosilicate (TEOS) as bonding interfaces, and in addition, N₂ or Ar plasmas were used for the surface activation. We finally introduce multichip-to-wafer direct oxide-oxide bonding between self-assembled dies and wafers having the PECVD-oxide layer.

Original language	English
Title of host publication	2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1458-1463
Number of pages	6
ISBN (Electronic)	9781479986095
DOIs	https://doi.org/10.1109/ECTC.2015.7159789
Publication status	Published - 2015 Jul 15
Event	2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015 - San Diego, United States Duration: 2015 May 26 → 2015 May 29

Publication series

Name	Proceedings - Electronic Components and Technology Conference
Volume	2015-July
ISSN (Print)	0569-5503

Other

Other	2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015
Country/Territory	United States
City	San Diego
Period	15/5/26 → 15/5/29

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ECTC.2015.7159789

Cite this

Hashiguchi, H., Yonekura, H., Fukushima, T., Murugesan, M., Kino, H., Lee, K. W., Tanaka, T., & Koyanagi, M. (2015). Plasma assisted multichip-to-wafer direct bonding technology for self-assembly based 3D integration. In 2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015 (pp. 1458-1463). [7159789] (Proceedings - Electronic Components and Technology Conference; Vol. 2015-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC.2015.7159789

Plasma assisted multichip-to-wafer direct bonding technology for self-assembly based 3D integration. / Hashiguchi, H.; Yonekura, H.; Fukushima, T. et al.

2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 1458-1463 7159789 (Proceedings - Electronic Components and Technology Conference; Vol. 2015-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hashiguchi, H, Yonekura, H, Fukushima, T, Murugesan, M, Kino, H, Lee, KW, Tanaka, T & Koyanagi, M 2015, Plasma assisted multichip-to-wafer direct bonding technology for self-assembly based 3D integration. in 2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015., 7159789, Proceedings - Electronic Components and Technology Conference, vol. 2015-July, Institute of Electrical and Electronics Engineers Inc., pp. 1458-1463, 2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015, San Diego, United States, 15/5/26. https://doi.org/10.1109/ECTC.2015.7159789

Hashiguchi H, Yonekura H, Fukushima T, Murugesan M, Kino H, Lee KW et al. Plasma assisted multichip-to-wafer direct bonding technology for self-assembly based 3D integration. In 2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 1458-1463. 7159789. (Proceedings - Electronic Components and Technology Conference). doi: 10.1109/ECTC.2015.7159789

Hashiguchi, H. ; Yonekura, H. ; Fukushima, T. et al. / Plasma assisted multichip-to-wafer direct bonding technology for self-assembly based 3D integration. 2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 1458-1463 (Proceedings - Electronic Components and Technology Conference).

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abstract = "We demonstrated plasma-assisted multichip-to-wafer direct bonding for self-assembly based 3D integration processes. We mainly evaluated the bonding yields and bonding strengths of dies obtained by multichip-to-wafer direct oxide-oxide bonding, and compared with wafer-to-wafer direct oxide-oxide bonding in their bonding properties. In this study, we employed thermal oxide and chemical mechanical polish (CMP)-treated oxide formed by plasma-enhanced chemical vapor deposition (PECVD) with tetraethyl orthosilicate (TEOS) as bonding interfaces, and in addition, N2 or Ar plasmas were used for the surface activation. We finally introduce multichip-to-wafer direct oxide-oxide bonding between self-assembled dies and wafers having the PECVD-oxide layer.",

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AU - Kino, H.

AU - Lee, K. W.

AU - Tanaka, T.

AU - Koyanagi, M.

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AB - We demonstrated plasma-assisted multichip-to-wafer direct bonding for self-assembly based 3D integration processes. We mainly evaluated the bonding yields and bonding strengths of dies obtained by multichip-to-wafer direct oxide-oxide bonding, and compared with wafer-to-wafer direct oxide-oxide bonding in their bonding properties. In this study, we employed thermal oxide and chemical mechanical polish (CMP)-treated oxide formed by plasma-enhanced chemical vapor deposition (PECVD) with tetraethyl orthosilicate (TEOS) as bonding interfaces, and in addition, N2 or Ar plasmas were used for the surface activation. We finally introduce multichip-to-wafer direct oxide-oxide bonding between self-assembled dies and wafers having the PECVD-oxide layer.

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Plasma assisted multichip-to-wafer direct bonding technology for self-assembly based 3D integration

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