Plasma assisted multichip-to-wafer direct bonding technology for self-assembly based 3D integration

H. Hashiguchi, H. Yonekura, T. Fukushima, M. Murugesan, H. Kino, K. W. Lee, T. Tanaka, M. Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

We demonstrated plasma-assisted multichip-to-wafer direct bonding for self-assembly based 3D integration processes. We mainly evaluated the bonding yields and bonding strengths of dies obtained by multichip-to-wafer direct oxide-oxide bonding, and compared with wafer-to-wafer direct oxide-oxide bonding in their bonding properties. In this study, we employed thermal oxide and chemical mechanical polish (CMP)-treated oxide formed by plasma-enhanced chemical vapor deposition (PECVD) with tetraethyl orthosilicate (TEOS) as bonding interfaces, and in addition, N2 or Ar plasmas were used for the surface activation. We finally introduce multichip-to-wafer direct oxide-oxide bonding between self-assembled dies and wafers having the PECVD-oxide layer.

Original languageEnglish
Title of host publication2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1458-1463
Number of pages6
ISBN (Electronic)9781479986095
DOIs
Publication statusPublished - 2015 Jul 15
Event2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015 - San Diego, United States
Duration: 2015 May 262015 May 29

Publication series

NameProceedings - Electronic Components and Technology Conference
Volume2015-July
ISSN (Print)0569-5503

Other

Other2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015
Country/TerritoryUnited States
CitySan Diego
Period15/5/2615/5/29

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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