Plasma anodization of evaporated Al-InP systems

Y. Hirayama, H. M. Park, F. Koshiga, T. Sugano

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Aluminium oxide-InP structures were fabricated by plasma anodization of evaporated Al-InP systems with intention of fabricating InP MISFETS. It was found that the resistivity and break-down strength of the A12O3 film were influenced by the selection of the end point of the anodization. At appropriate conditions the resistivity of 5 × 1010 - 1012Ω cm for the anodic Al2O3 and the minimum density of the interface trap states of 4 × 1011 cm-2 ev-1 for Al2 O3 -InP systems were obtained.

Original languageEnglish
Pages (from-to)1011-1022
Number of pages12
JournalJournal of Electronic Materials
Volume11
Issue number6
DOIs
Publication statusPublished - 1982 Nov 1
Externally publishedYes

Keywords

  • AlO
  • InP
  • MIS diode
  • plasma anodization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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