Aluminium oxide-InP structures were fabricated by plasma anodization of evaporated Al-InP systems with intention of fabricating InP MISFETS. It was found that the resistivity and break-down strength of the A12O3 film were influenced by the selection of the end point of the anodization. At appropriate conditions the resistivity of 5 × 1010 - 1012Ω cm for the anodic Al2O3 and the minimum density of the interface trap states of 4 × 1011 cm-2 ev-1 for Al2 O3 -InP systems were obtained.
- MIS diode
- plasma anodization
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry