Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures

K. Sawano, K. Arimoto, Y. Hirose, S. Koh, N. Usami, K. Nakagawa, T. Hattori, Y. Shiraki

    Research output: Contribution to journalConference articlepeer-review

    7 Citations (Scopus)

    Abstract

    Ultrasmooth strain-relaxed SiGe buffer layer with rms roughness of 0.4 nm was obtained by chemical mechanical polishing (CMP). The strained Si modulation-doped structure grown on the planarized buffer layer showed mobility enhancement by a factor of 6 at low temperatures. Thermal stability of the strained Si layer was also found to be improved by CMP, which may come from the reduction of dislocation nucleation sites related to the surface undulation.

    Original languageEnglish
    Pages (from-to)693-696
    Number of pages4
    JournalJournal of Crystal Growth
    Volume251
    Issue number1-4
    DOIs
    Publication statusPublished - 2003 Apr 1
    EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
    Duration: 2002 Sep 152002 Sep 20

    Keywords

    • A1. Modulation doped structure
    • A3. Chemical mechanical polishing
    • A3. Molecular beam epitaxy
    • B1. SiGe
    • B1. Strained silicon

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry

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