Planar doping by interrupted MOVPE growth of GaAs

H. Ohno, E. Ikeda, H. Hasegawa

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Planar doping of GaAs by metalorganic vapor phase epitaxy, involving the suspension of growth whilst the doping gas is introduced, is investigated to synthesize complex free-carrier profiles. Silicon is used as a dopant. It deposits on the non-growing surface and is subsequently incorporated as a planar region of doping. It is shown that free-carrier profiles can be produced by including dopant planes in the epitaxial layer.

Original languageEnglish
Pages (from-to)15-20
Number of pages6
JournalJournal of Crystal Growth
Volume68
Issue number1
DOIs
Publication statusPublished - 1984 Sep 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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