TY - JOUR
T1 - Planar doping by interrupted MOVPE growth of GaAs
AU - Ohno, H.
AU - Ikeda, E.
AU - Hasegawa, H.
N1 - Funding Information:
Akatsu (Hokkaido University), S. Yagihashi, and part by Hoso-Bunka Foundation and by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science, and Culture.
PY - 1984/9/1
Y1 - 1984/9/1
N2 - Planar doping of GaAs by metalorganic vapor phase epitaxy, involving the suspension of growth whilst the doping gas is introduced, is investigated to synthesize complex free-carrier profiles. Silicon is used as a dopant. It deposits on the non-growing surface and is subsequently incorporated as a planar region of doping. It is shown that free-carrier profiles can be produced by including dopant planes in the epitaxial layer.
AB - Planar doping of GaAs by metalorganic vapor phase epitaxy, involving the suspension of growth whilst the doping gas is introduced, is investigated to synthesize complex free-carrier profiles. Silicon is used as a dopant. It deposits on the non-growing surface and is subsequently incorporated as a planar region of doping. It is shown that free-carrier profiles can be produced by including dopant planes in the epitaxial layer.
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U2 - 10.1016/0022-0248(84)90390-7
DO - 10.1016/0022-0248(84)90390-7
M3 - Article
AN - SCOPUS:0041746865
VL - 68
SP - 15
EP - 20
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1
ER -