Planar doping by interrupted MOVPE growth of GaAs

H. Ohno; E. Ikeda; H. Hasegawa

doi:10.1016/0022-0248(84)90390-7

Planar doping by interrupted MOVPE growth of GaAs

H. Ohno, E. Ikeda, H. Hasegawa

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Planar doping of GaAs by metalorganic vapor phase epitaxy, involving the suspension of growth whilst the doping gas is introduced, is investigated to synthesize complex free-carrier profiles. Silicon is used as a dopant. It deposits on the non-growing surface and is subsequently incorporated as a planar region of doping. It is shown that free-carrier profiles can be produced by including dopant planes in the epitaxial layer.

Original language	English
Pages (from-to)	15-20
Number of pages	6
Journal	Journal of Crystal Growth
Volume	68
Issue number	1
DOIs	https://doi.org/10.1016/0022-0248(84)90390-7
Publication status	Published - 1984 Sep 1
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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