Abstract
Planar doping of GaAs by metalorganic vapor phase epitaxy, involving the suspension of growth whilst the doping gas is introduced, is investigated to synthesize complex free-carrier profiles. Silicon is used as a dopant. It deposits on the non-growing surface and is subsequently incorporated as a planar region of doping. It is shown that free-carrier profiles can be produced by including dopant planes in the epitaxial layer.
Original language | English |
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Pages (from-to) | 15-20 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 68 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1984 Sep 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry