Bidirectionally cascadable optical pixels are proposed that consist of a single vertical cavity surface emitting laser thyristor and a double vertical cavity phototransistor. Despite almost identical layer structures, each device characteristic can be independently optimized by introducing a λ/2-spacer layer into the phototransistor section. A lasing threshold of 0.8 mA and a slope efficiency of 0.25 W/A are obtained for the laser-thyristor, and a flat-topped photocurrent spectrum over 30 A and a photocurrent gain of 70 A/W are obtained for the phototransistor at the resonant wavelength. This paper demonstrates the possibility of monolithic integration using thermal desorption and a regrowth technique and the suitability of these devices for massively parallel optical interconnections.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering